中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [10]
采集方式
OAI收割 [9]
iSwitch采集 [1]
内容类型
期刊论文 [9]
会议论文 [1]
发表日期
2010 [1]
2007 [1]
2006 [2]
2002 [3]
2000 [2]
1999 [1]
更多
学科主题
半导体材料 [4]
半导体物理 [3]
光电子学 [2]
筛选
浏览/检索结果:
共10条,第1-10条
帮助
限定条件
专题:半导体研究所
第一署名单位
第一作者单位
通讯作者单位
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
Accurate determination of electronic transition energy of carbon nanotubes from the resonant behavior of radial breathing modes and their overtones
期刊论文
OAI收割
acta physica sinica, ACTA PHYSICA SINICA, 2010, 2010, 卷号: 59, 59, 期号: 11, 页码: 7966-7973, 7966-7973
作者:
Zhang J (Zhang Jun)
;
Tan PH (Tan Ping-Heng)
;
Zhao WJ (Zhao Wei-Jie)
;
Tan, PH, Chinese Acad Sci, Inst Semicond, State Key Lab SupperLattices & Microstruct, Beijing 100083, Peoples R China. phtan@semi.ac.cn
  |  
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2010/12/27
single walled carbon nanotubes
Single Walled Carbon Nanotubes
Radial Breathing Modes
Resonant Raman Scattering
Electronic Transition Energy
Stokes-raman Scattering
Vibrational-modes
Graphite
Diameter
Spectra
radial breathing modes
resonant Raman scattering
electronic transition energy
STOKES-RAMAN SCATTERING
VIBRATIONAL-MODES
GRAPHITE
DIAMETER
SPECTRA
Optical analysis of dislocation-related physical processes in GaN-based epilayers
期刊论文
OAI收割
physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891
Jiang, DS (Jiang, De-Sheng)
;
Zhao, DG (Zhao, De-Gang)
;
Yang, H (Yang, Hui)
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy
期刊论文
OAI收割
journal of applied physics, 2006, 卷号: 99, 期号: 3, 页码: art.no.034903
作者:
Xu YQ
收藏
  |  
浏览/下载:121/0
  |  
提交时间:2010/04/11
IMPROVED LUMINESCENCE EFFICIENCY
OPTICAL-PROPERTIES
LASERS
NITROGEN
ORIGIN
Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
期刊论文
OAI收割
applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130
Liang S (Liang S.)
;
Zhu HL (Zhu H. L.)
;
Ye XL (Ye X. L.)
;
Wang W (Wang W.)
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/04/11
photoluminescence
quantum dots
indium arsenide
1.3 MU-M
CHEMICAL-VAPOR-DEPOSITION
PHASE-EPITAXY
GAAS
LUMINESCENCE
SUBSTRATE
ISLANDS
DENSITY
LASERS
LAYER
A novel application to quantum dot materials to the active region of superluminescent diodes
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 25-29
作者:
Li CM
;
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/08/12
atomic force microscopy
low dimensional structures
quantum dots
strain
molecular beam epitaxy
superluminescent diodes
1.3 MU-M
HIGH-POWER
INTEGRATED ABSORBER
INAS ISLANDS
SPECTRUM
WINDOW
LAYER
SIZE
Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film
期刊论文
OAI收割
acta physica sinica, 2002, 卷号: 51, 期号: 7, 页码: 1564-1570
Wang YQ
;
Chen WD
;
Chen CY
;
Diao HW
;
Zhang SB
;
Xu YY
;
Kong GL
;
Liao XB
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
silicon-rich silicon oxide
microstructure
light-emission
rapid thermal annealing
CHEMICAL-VAPOR-DEPOSITION
AMORPHOUS-SILICON
POROUS SILICON
SI
LUMINESCENCE
NANOCRYSTALS
SPECTRA
SYSTEM
Influence of strain on annealing effects of In(Ga)As quantum dots
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141
作者:
Xu B
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/08/12
low dimensional structures
strain
molecular beam epitaxy
quantum dots
ELECTRONIC-STRUCTURE
PHOTOLUMINESCENCE
INTERDIFFUSION
TRANSITIONS
SPECTRA
Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate
期刊论文
OAI收割
chinese physics letters, 2000, 卷号: 17, 期号: 8, 页码: 612-614
Chen Y
;
Li GH
;
Han HX
;
Wang ZP
;
Xu DP
;
Yang H
收藏
  |  
浏览/下载:57/0
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
PHOTOLUMINESCENCE
Optical transitions in cubic gan grown by metalorganic chemical vapor deposition on gaas (100) substrate
期刊论文
iSwitch采集
Chinese physics letters, 2000, 卷号: 17, 期号: 8, 页码: 612-614
作者:
Chen, Y
;
Li, GH
;
Han, HX
;
Wang, ZP
;
Xu, DP
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/05/12
Preparation and characterization of erbium doped sol-gel silica glasses
会议论文
OAI收割
conference on rare-earth-doped materials and devices iii, san jose, ca, jan 27-28, 1999
Lei HB
;
Yang QQ
;
Ou HY
;
Chen BW
;
Yu JZ
;
Wang QM
;
Xie DT
;
Wu JG
;
Xu DF
;
Xu GX
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
Er-doped silica glass
sol-gel process
photoluminescence
PLANAR WAVE-GUIDES
MOLECULAR-BEAM EPITAXY
CRYSTAL SILICON
IMPLANTED SI
LUMINESCENCE
ELECTROLUMINESCENCE
FABRICATION
IMPURITIES
FILMS
IONS