机构

• 半导体研究所 [9]

采集方式

• OAI收割 [9]

内容类型

• 期刊论文 [8]
• 会议论文 [1]

发表日期

• 2011 [1]
• 2010 [1]
• 2009 [1]
• 2008 [3]
• 2007 [3]

学科主题

• 光电子学 [9]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Schottky barrier light emitting diode in standard CMOS technology 期刊论文  OAI收割 group iv photonics (gfp), 2011 8th ieee international conference on, 2011, 页码: 296-298 Huang, Beiju; Wang, Wei; Dong, Zan; Zhang, Zanyun; Guo, Weilian; Chen, Hongda 收藏  |  浏览/下载：22/0  |  提交时间：2012/06/13 CMOS integrated circuits  Diodes  Light  Light emission  Photonics  Schottky barrier diodes  Semiconducting silicon compounds  Semiconductor diodes   Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载：73/2  |  提交时间：2010/05/24 Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  REVERSE-BIAS LEAKAGE  MOLECULAR-BEAM EPITAXY  P-N-JUNCTIONS  POSITRON-ANNIHILATION  DIODES  FILMS   A new p-n structure ultraviolet photodetector with p(-)-GaN active region 期刊论文  OAI收割 acta physica sinica, 2009, 卷号: 58, 期号: 10, 页码: 7255-7260 Zhou M (Zhou Mei); Zhao DG (Zhao De-Gang) 收藏  |  浏览/下载：188/83  |  提交时间：2010/03/08 p menus type GaN   Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector 期刊论文  OAI收割 semiconductor science and technology, 2008, 卷号: 23, 期号: 10, 页码: art. no. 105015 Zhang, S; Zhao, DG; Jiang, DS; Liu, WB; Duan, LH; Wang, YT; Zhu, JJ; Liu, ZS; Zhang, SM; Yang, H 收藏  |  浏览/下载：63/0  |  提交时间：2010/03/08 METAL ULTRAVIOLET PHOTODETECTORS  UV DETECTORS   Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 92, 期号: 1, 页码: art. no. 012115 Wu, YL; Zhang, LW; Xie, GL; Zhu, JL; Chen, YH 收藏  |  浏览/下载：63/3  |  提交时间：2010/03/08 MANGANITE-BASED HETEROJUNCTION  SCHOTTKY CONTACTS  TUNNELING CURRENT  ZNO   Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文  OAI收割 conference on advanced materials and devices for sensing and imaging iii, beijing, peoples r china, nov 12-14, 2007 Wang, XH; Wan, XL; Xiao, HL; Feng, C; Way, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09 hydrogen sensor  AlGaN/GaN heterostructure  Schottky diode   Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文  OAI收割 applied physics letters, 2007, 卷号: 90, 期号: 6, 页码: art.no.062106 作者:  Li XY;  Jiang DS;  Yang H;  Zhu JJ;  Zhang SM 收藏  |  浏览/下载：52/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Performance improvement of GaN based Schottky barrier ultraviolet photodetector by adding a thin AlGaN window layer 期刊论文  OAI收割 chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1745-1748 Zhou M (Zhou Mei); Zhao DG (Zhao De-Gang) 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29 HIGH-SPEED   A new Schottky barrier structure of GaN-based ultraviolet photodetector 期刊论文  OAI收割 acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5513-5517 Zhou, M (Zhou Mei); Zuo, SH (Zuo Shu-Hua); Zhao, DG (Zhao De-Gang) 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29 GaN