机构

• 半导体研究所 [36]

采集方式

• OAI收割 [36]

内容类型

• 期刊论文 [31]
• 会议论文 [5]

发表日期

• 2011 [2]
• 2008 [1]
• 2007 [1]
• 2006 [3]
• 2005 [1]
• 2004 [5]
• 更多

学科主题

• 半导体材料 [36]

筛选

浏览/检索结果: 共36条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 99, 期号: 3, 页码: 32106 Jiang CY; Ma H; Yu JL; Liu Y; Chen YH 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06 QUANTUM WIRES  OPTICAL-PROPERTIES  RECTIFICATION  FLUCTUATIONS   Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311 作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY 收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05 SELF-ORGANIZED ISLANDS  MOLECULAR-BEAM-EPITAXY  OPTICAL-PROPERTIES  SURFACES  EMISSION  DENSITY  SIZE   Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文  OAI收割 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix 期刊论文  OAI收割 applied physics letters, 2007, 卷号: 90, 期号: 10, 页码: art.no.103118 作者:  Xu B;  Ye XL;  Jin P 收藏  |  浏览/下载：75/0  |  提交时间：2010/03/29 INAS QUANTUM DOTS   High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001) 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 88, 期号: 12, 页码: art.no.123104 作者:  Ye XL;  Jin P 收藏  |  浏览/下载：76/0  |  提交时间：2010/04/11 NANOWIRES  THRESHOLD  WELLS  INP   Selective growth of InAs islands on patterned GaAs (100) substrate 期刊论文  OAI收割 superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 446-453 作者:  Xu B;  Jin P 收藏  |  浏览/下载：92/0  |  提交时间：2010/04/11 patterned substrate  molecular beam epitaxy  quantum dots  InAs  GaAs  InGaAs  ASSEMBLED QUANTUM DOTS  MOLECULAR-BEAM EPITAXY  FABRICATION   Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 31, 期号: 1, 页码: 43-47 作者:  Jin P;  Xu B 收藏  |  浏览/下载：79/0  |  提交时间：2010/04/11 patterned substrate  GaAs  molecular beam epitaxy  nucleation positions  ASSEMBLED QUANTUM DOTS  MOLECULAR-BEAM EPITAXY  GE ISLANDS  GROWTH  SURFACE  ARRAYS   Self-organized superlattices along the [001] growth direction in In0.52Al0.48As layers grown on nominally (001) InP substrates by molecular beam epitaxy 期刊论文  OAI收割 superlattices and microstructures, 2005, 卷号: 38, 期号: 3, 页码: 151-160 Wang YL; Chen YH; Wu J; Wang ZG; Zeng YP 收藏  |  浏览/下载：86/21  |  提交时间：2010/03/17 composition modulation   Liquid phase epitaxy of Al0.3Ga0.7As islands 期刊论文  OAI收割 journal of crystal growth, 2004, 卷号: 270, 期号: 1-2, 页码: 38-41 Sun, J; Hu, LZ; Sun, YC; Wang, ZY; Zhang, HZ 收藏  |  浏览/下载：423/56  |  提交时间：2010/03/09 crystal morphology   Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001) 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Wang YL; Wu J; Chen YH; Wang ZG; Zeng YP 收藏  |  浏览/下载：124/17  |  提交时间：2010/03/29 LAYER-ORDERING ORIENTATION