机构

• 半导体研究所 [59]

采集方式

• OAI收割 [38]
• iSwitch采集 [21]

内容类型

• 期刊论文 [49]
• 会议论文 [10]

发表日期

• 2020 [1]
• 2019 [2]
• 2017 [1]
• 2013 [1]
• 2011 [10]
• 2010 [3]
• 更多

学科主题

• 半导体材料 [24]
• 半导体物理 [7]
• 光电子学 [2]
• 半导体器件 [2]

筛选

浏览/检索结果: 共59条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Epoxy composite with significantly improved thermal conductivity by constructing a vertically aligned three-dimensional network of silicon carbide nanowires/ boron nitride nanosheets 期刊论文  OAI收割 COMPOSITES PART B-ENGINEERING, 2020, 卷号: 187, 页码: 107855 作者:  Chao Xiao;   Yujie Guo ;   Yunlu Tang;   Jiwan Ding ;   Xian Zhang ;   Kang Zheng ;   Xingyou Tian   |  收藏  |  浏览/下载：8/0  |  提交时间：2021/06/28 Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension 期刊论文  OAI收割 Chinese Physics B, 2019, 卷号: 28, 期号: 6, 页码: 068504 作者:  Zheng-Xin Wen;   Feng Zhang;   Zhan-Wei Shen;   Jun Chen;   Ya-Wei He;   Guo-Guo Yan;   Xing-Fang Liu;   Wan-Shun Zhao;   Lei Wang;   Guo-Sheng Sun;   Yi-Ping Zeng   |  收藏  |  浏览/下载：6/0  |  提交时间：2020/07/31 Perfect absorption and strong magnetic polaritons coupling of graphene-based silicon carbide grating cavity structures 期刊论文  OAI收割 Journal of Physics D: Applied Physics, 2019, 卷号: 52, 页码: 015101 作者:  Jicheng Wang ;   Liu Yang ;   Mian Wang ;   Zheng-Da Hu ;   Qilin Deng ;  Yanguang Nie ;   Feng Zhang ;   Tian Sang   |  收藏  |  浏览/下载：19/0  |  提交时间：2020/07/31 A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 7, 页码: 941-944 作者:  Zhengxin Wen;  Feng Zhang;  Member;  IEEE;  Zhanwei Shen 收藏  |  浏览/下载：36/0  |  提交时间：2018/06/01 Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method 期刊论文  OAI收割 materials science forum, 2013, 页码: 740-742 Lin Dong; Liu Zheng; Xingfang Liu 收藏  |  浏览/下载：8/0  |  提交时间：2014/05/16 Size-dependent electroluminescence from si quantum dots embedded in amorphous sic matrix 期刊论文  iSwitch采集 Journal of applied physics, 2011, 卷号: 110, 期号: 6, 页码: 6 作者:  Rui, Yunjun;  Li, Shuxin;  Xu, Jun;  Song, Chao;  Jiang, Xiaofan 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12 Structural and electronic properties of si nanocrystals embedded in amorphous sic matrix 期刊论文  iSwitch采集 Journal of alloys and compounds, 2011, 卷号: 509, 期号: 9, 页码: 3963-3966 作者:  Song, Chao;  Rui, Yunjun;  Wang, Quanbiao;  Xu, Jun;  Li, Wei 收藏  |  浏览/下载：49/0  |  提交时间：2019/05/12 Silicon carbide  Thin films  Crystal structure  Electronic properties   Determination of the transport properties in 4h-sic wafers by raman scattering measurement 期刊论文  iSwitch采集 Chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: 6 作者:  Sun Guo-Sheng;  Liu Xing-Fang;  Wu Hai-Lei;  Yan Guo-Guo;  Dong Lin 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 4h-sic  Raman scattering  Lopc modes  Transport properties   High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films 期刊论文  OAI收割 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 Zhang, Feng; Sun, Guosheng; Huang, Huolin; Wu, Zhengyun; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Zheng, Liu; Dong, Lin; Zeng, Yiping 收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14 Integrated circuits  Metal insulator boundaries  Photodetectors  Semiconducting silicon compounds  Semiconductor insulator boundaries  Silicon carbide   Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301 作者:  Liu XF;  Yan GG;  Zheng L;  Dong L 收藏  |  浏览/下载：37/3  |  提交时间：2011/07/05 4H-SiC  Raman scattering  LOPC modes  transport properties  SILICON-CARBIDE  LIGHT  GAP