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Germanium Nitride as a Buffer Layer for Phase Change Memory 期刊论文  OAI收割
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 10, 页码: 107201
Zhang, X; Liu, B; Peng, C; Rao, F; Zhou, XL; Song, SN; Wang, LY; Cheng, Y; Wu, LC; Yao, DN; Song, ZT; Feng, SL
收藏  |  浏览/下载:31/0  |  提交时间:2013/04/17
Germanium Nitride as a Buffer Layer for Phase Change Memory 期刊论文  OAI收割
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 10, 页码: 107201
Zhang, X; Liu, B(重点实验室); Peng, C; Rao, F; Zhou, XL; Song, SN; Wang, LY; Cheng, Y; Wu, LC; Yao, DN; song, zt(重点实验室); Feng, SL(重点实验室)
收藏  |  浏览/下载:15/0  |  提交时间:2013/05/10
Germanium Nitride as a Buffer Layer for Phase Change Memory 期刊论文  OAI收割
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 10, 页码: 107201
Zhang, X; Liu, B(重点实验室); Peng, C; Rao, F; Zhou, XL; Song, SN; Wang, LY; Cheng, Y; Wu, LC; Yao, DN; song, zt(重点实验室); Feng, SL(重点实验室)
收藏  |  浏览/下载:15/0  |  提交时间:2013/05/10
Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer 期刊论文  OAI收割
Journal of Semiconductors., 2011, 卷号: 32, 期号: 9
Cai, Daolin; Li, Ping; Zhai, Yahong; Song, ZT; Chen, HP
收藏  |  浏览/下载:50/0  |  提交时间:2012/08/28
Performance improvement of phase change memory cell by using a cerium dioxide buffer layer 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 20, 页码: 203504-203504
Shang, F; Zhai, JW; Song, S; Song, ZT; Wang, CZ
收藏  |  浏览/下载:66/0  |  提交时间:2012/03/24
Structural and electrical properties of metal-ferroelectric-insulator-semiconductor transistors using a Pt/Bi3.25Nd0.75Ti3O12/Y2O3/Si structure 期刊论文  OAI收割
SOLID-STATE ELECTRONICS, 2007, 卷号: 51, 期号: 3, 页码: 371-375
Tang, MH; Zhou, YC; Zheng, XJ; Yan, Z; Cheng, CP; Ye, Z; Hu, ZS
收藏  |  浏览/下载:12/0  |  提交时间:2012/03/24