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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [38]
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OAI收割 [38]
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期刊论文 [31]
会议论文 [7]
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2011 [2]
2010 [2]
2009 [1]
2008 [2]
2007 [1]
2006 [5]
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学科主题
半导体材料 [38]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ
;
Lin ZJ
;
Zhang Y
;
Meng LG
;
Cao ZF
;
Luan CB
;
Chen H
;
Wang ZG
收藏
  |  
浏览/下载:56/2
  |  
提交时间:2011/07/05
AlGaN/GaN heterostructures
thermal stressing
polarization
self-consistently solving Schrodinger's and Poisson's equations
FIELD-EFFECT TRANSISTORS
POLARIZATION
STABILITY
CHARGE
GAN
Kondo effect in a triangular triple quantum dots ring with three terminals
期刊论文
OAI收割
solid state communications, 2010, 卷号: 150, 期号: 25-26, 页码: 1136-1140
Liu Y (Liu Yu)
;
Chen YH (Chen Yonghai)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:176/27
  |  
提交时间:2010/07/05
Quantum dot
Symmetry
Kondo effect
Fano effect
SINGLE-ELECTRON TRANSISTOR
SPIN
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504
Li YB (Li Yanbo)
;
Zhang Y (Zhang Yang)
;
Zeng YP (Zeng Yiping)
收藏
  |  
浏览/下载:212/46
  |  
提交时间:2010/10/11
INAS/ALSB QUANTUM-WELLS
LOW-POWER APPLICATIONS
HEMTS
MODULATION
HETEROSTRUCTURES
TECHNOLOGY
CHANNEL
VOLTAGE
MASS
Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy
期刊论文
OAI收割
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ
;
Chang BK
;
Yang Z
;
Niu J
;
Xiong YJ
;
Shi F
;
Guo H
;
Zeng YP
收藏
  |  
浏览/下载:65/25
  |  
提交时间:2010/03/08
GAAS PHOTOCATHODES
GALLIUM-ARSENIDE
ALXGA1-XAS
DIFFUSION
SURFACE
ENERGY
The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition
期刊论文
OAI收割
vacuum, 2008, 卷号: 82, 期号: 5, 页码: 495-500
Zhu, BL
;
Sun, XH
;
Zha, XZ
;
Su, FH
;
Li, GH
;
Wu, XG
;
Wu, J
;
Wu, R
;
Liu, J
收藏
  |  
浏览/下载:46/1
  |  
提交时间:2010/03/08
PLD
ZnO films
substrate temperature
crystal quality
grain size
optical properties
Effect of Surface Potential Barrier on the Electron Energy Distribution of NEA Photocathodes
期刊论文
OAI收割
半导体学报, 2008, 卷号: 29, 期号: 8, 页码: 1479-1483
Zou Jijun
;
Yang Zhi
;
Qiao Jianliang
;
Chang Benkang
;
Zeng Yiping
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/23
Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix
期刊论文
OAI收割
applied physics letters, 2007, 卷号: 90, 期号: 10, 页码: art.no.103118
作者:
Xu B
;
Ye XL
;
Jin P
收藏
  |  
浏览/下载:75/0
  |  
提交时间:2010/03/29
INAS QUANTUM DOTS
Porous ZnAl2O4 spinel nanorods doped with Eu3+: synthesis and photoluminescence
期刊论文
OAI收割
nanotechnology, 2006, 卷号: 17, 期号: 12, 页码: 2982-2987
Cheng BC
;
Qu SC
;
Zhou HY
;
Wang ZG
收藏
  |  
浏览/下载:118/0
  |  
提交时间:2010/04/11
SPRAY-PYROLYSIS TECHNIQUE
SOL-GEL PROCESS
ZINC ALUMINATE
OPTICAL-PROPERTIES
CATHODOLUMINESCENT CHARACTERISTICS
HYDROTHERMAL SYNTHESIS
NANOCRYSTALLINE
COMBUSTION
SPECTRA
METHANE
Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots
期刊论文
OAI收割
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1315-1319
Zhou WM
;
Wang CY
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/04/11
quantum dots
strain and stress distribution
strain energy
finite element method
ISLANDS
GROWTH
GAAS
GAAS(001)
EVOLUTION