中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [5]
采集方式
OAI收割 [5]
内容类型
期刊论文 [5]
发表日期
2011 [1]
2006 [2]
2001 [1]
1998 [1]
学科主题
半导体材料 [5]
筛选
浏览/检索结果:
共5条,第1-5条
帮助
限定条件
学科主题:半导体材料
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
发表日期升序
发表日期降序
题名升序
题名降序
作者升序
作者降序
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
OAI收割
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Nanoinstabilities as revealed by shrinkage of nanocavities in silicon during irradiation
期刊论文
OAI收割
international journal of nanotechnology, 2006, 卷号: 3, 期号: 4 sp.iss.si, 页码: 492-516
Zhu, XF (Zhu, Xianfang)
;
Wang, ZG (Wang, Zhanguo)
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2010/03/29
nanocavity
nanoparticle
nanoinstabilities
open volume defect
thermodynamic nonequilibrium
nanosize
nanotime
energetic beam irradiation
amorphous structure
nanocurvature
surface energy
WALLED CARBON NANOTUBES
AMORPHOUS-SILICON
ION IRRADIATION
PREFERENTIAL AMORPHIZATION
IN-SITU
INSTABILITY
BEAM
IMPLANTATION
CAVITIES
POINT
Electron irradiation-induced defects in InP pre-annealed at high temperature
期刊论文
OAI收割
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.)
;
Dong ZY (Dong Z. Y.)
;
Deng AH (Deng A. H.)
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/04/11
indium phosphide
defect
irradiation
THERMALLY STIMULATED CURRENT
UNDOPED SEMIINSULATING INP
DEEP-LEVEL DEFECTS
FRENKEL PAIRS
FE
SPECTROSCOPY
PHOSPHIDE
AMBIENT
TRAPS
Effect of as interstitial diffusionon on the properties of undoped semi-insulating LECGaAs
期刊论文
OAI收割
rare metals, 2001, 卷号: 20, 期号: 3, 页码: 187-191
Yang RX
;
Zhang FQ
;
Chen NF
收藏
  |  
浏览/下载:89/3
  |  
提交时间:2010/08/12
semi-insulating GaAs
intrinsic acceptor defects
As interstitial indiffusion
As pressure
annealing
SEMIINSULATING GAAS
Dependence of photoluminescence induced by carbon contamination on GeSi structure
期刊论文
OAI收割
journal of crystal growth, 1998, 卷号: 187, 期号: 2, 页码: 197-202
Guo LW
;
Shi JJ
;
Cheng WQ
;
Li YK
;
Huang Q
;
Zhou JM
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/08/12
SILICON
GROWTH
SUPERLATTICES