机构

• 半导体研究所 [17]

采集方式

• OAI收割 [17]

内容类型

• 期刊论文 [17]

发表日期

• 2014 [1]
• 2011 [1]
• 2010 [1]
• 2009 [3]
• 2008 [4]
• 2007 [4]
• 更多

学科主题

• 半导体物理 [17]

筛选

浏览/检索结果: 共17条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Abnormal variation of optical properties of vanadium oxide thin film at semiconductor-metal transition 期刊论文  OAI收割 acta physica sinica, ACTA PHYSICA SINICA, 2014, 2014, 卷号: 63, 63, 期号: 10, 页码: 107104, 107104 作者:  Yang, W;  Liang, JR;  Liu, J;  Ji, Y   |  收藏  |  浏览/下载：10/0  |  提交时间：2015/04/02 Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 5, 页码: article no.54503, Article no.54503 作者:  Jiang XW;  Li SS;  Xia JB;  Wang LW;  Jiang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xwjiang@semi.ac.cn   |  收藏  |  浏览/下载：49/2  |  提交时间：2011/07/05 FIELD-EFFECT TRANSISTORS  SEMICONDUCTOR-DEVICES  SILICON DEVICES  MONTE-CARLO  MOSFETS  NANOTRANSISTORS  APPROXIMATION  EQUATIONS  DESIGN  MODELS  Field-effect Transistors  Semiconductor-devices  Silicon Devices  Monte-carlo  Mosfets  Nanotransistors  Approximation  Equations  Design  Models   Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs 期刊论文  OAI收割 chinese physics letters, CHINESE PHYSICS LETTERS, 2010, 2010, 卷号: 27, 27, 期号: 5, 页码: art. no. 057101, Art. No. 057101 作者:  Deng HX (Deng Hui-Xiong);  Jiang XW (Jiang Xiang-Wei);  Tang LM (Tang Li-Ming);  Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hxdeng@semi.ac.cn   |  收藏  |  浏览/下载：101/3  |  提交时间：2010/05/24 SIMULATION  Simulation  Transistors  Limit  Nm  TRANSISTORS  LIMIT  NM   Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 8, 页码: art.no.084510 Jiang XW (Jiang Xiang-Wei); Deng HX (Deng Hui-Xiong); Li SS (Li Shu-Shen); Luo JW (Luo Jun-Wei); Wang LW (Wang Lin-Wang) 收藏  |  浏览/下载：158/62  |  提交时间：2010/03/08 ELECTRONIC-STRUCTURE   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者:  Qian X 收藏  |  浏览/下载：79/7  |  提交时间：2010/03/08 aluminium compounds  carrier lifetime  gallium arsenide  high-frequency effects  III-V semiconductors  optical Kerr effect  semiconductor heterojunctions  spin dynamics  two-dimensional electron gas   Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 25, 页码: art. no. 252905 作者:  Zhang XW 收藏  |  浏览/下载：58/0  |  提交时间：2010/03/08 high-k dielectric thin films  MOS capacitors  work function   A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs 期刊论文  OAI收割 ieee transactions on electron devices, 2008, 卷号: 55, 期号: 7, 页码: 1720-1726 Jiang, XW; Deng, HX; Luo, JW; Li, SS; Wang, LW 收藏  |  浏览/下载：153/1  |  提交时间：2010/03/08 dopant fluctuation  linear combination of bulk band (LCBB)  MOSFET  quantum mechanical  threshold  3-D   First-principles study of the electronic structures and magnetic properties of 3d transition metal-doped anatase TiO2 期刊论文  OAI收割 journal of physics-condensed matter, 2008, 卷号: 20, 期号: 12, 页码: art. no. 125207 Peng, HW; Li, JB; Li, SS; Xia, JB 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/08 TITANIUM-DIOXIDE  ROOM-TEMPERATURE  SEMICONDUCTORS  FERROMAGNETISM  MODEL   Multiple valley couplings in nanometer Si metal-oxide-semiconductor field-effect transistors 期刊论文  OAI收割 journal of applied physics, 2008, 卷号: 103, 期号: 12, 页码: art. no. 124507 Deng, HX; Jiang, XW; Luo, JW; Li, SS; Xia, JB; Wang, LW 收藏  |  浏览/下载：65/5  |  提交时间：2010/03/08 SIMULATION  MOSFETS  SUPERLATTICES  REGIME  LIMIT   Tuning of plasmon propagation in two-dimensional electrons 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 93, 期号: 25, 页码: art. no. 251501 Li C; Wu XG 收藏  |  浏览/下载：224/75  |  提交时间：2010/03/08 field effect transistors  plasmons  semiconductor heterojunctions  spin-orbit interactions  two-dimensional electron gas