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  • 半导体材料 [130]
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Radiation modulation of circular photogalvanic effect in two-dimensional electron gas system 期刊论文  OAI收割
journal of physics: conference series, 2012, 卷号: 400, 期号: part 4, 页码: 042024
Jiang, Chongyun; Ma, Hui; Yu, Jinling; Liu, Yu; Chen, Yonghai
收藏  |  浏览/下载:15/0  |  提交时间:2013/05/13
Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文  OAI收割
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者:  
Xu B
收藏  |  浏览/下载:51/3  |  提交时间:2011/07/05
Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system 期刊论文  OAI收割
applied physics letters, 2011, 卷号: 98, 期号: 23, 页码: art. no. 232116
作者:  
Jiang CY;  Yu JL
收藏  |  浏览/下载:48/6  |  提交时间:2011/07/15
Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system 期刊论文  OAI收割
applied physics letters, 2011, 卷号: 99, 期号: 3, 页码: 32106
Jiang CY; Ma H; Yu JL; Liu Y; Chen YH
收藏  |  浏览/下载:13/0  |  提交时间:2012/02/06
Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文  OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF; Chen, YH; Lei, W; Zhou, XL; Luo, S; Hu, YZ; Wang, LJ; Yang, T; Wang, ZG
收藏  |  浏览/下载:18/0  |  提交时间:2012/02/06
High-power quantum dot superluminescent diode with integrated optical amplifier section 期刊论文  OAI收割
electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191-
Wang, ZC; Jin, P; Lv, XQ; Li, XK; Wang, ZG
收藏  |  浏览/下载:13/0  |  提交时间:2012/02/06
Nanostructural instability of single-walled carbon nanotubes during electron beam induced shrinkage 期刊论文  OAI收割
carbon, 2011, 卷号: 49, 期号: 9, 页码: 3120-3124
Zhu XF; Li LX; Huang SL; Wang ZG; Lu GQ; Sun CH; Wang LZ
收藏  |  浏览/下载:25/3  |  提交时间:2011/07/05
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文  OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:  
Liu XF;  Yan GG;  Zheng L;  Dong L
收藏  |  浏览/下载:37/3  |  提交时间:2011/07/05
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文  OAI收割
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  
Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载:49/4  |  提交时间:2011/07/05
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文  OAI收割
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:  
Li GK
收藏  |  浏览/下载:74/2  |  提交时间:2011/07/05