机构

• 半导体研究所 [57]

采集方式

• OAI收割 [57]

内容类型

• 期刊论文 [52]
• 会议论文 [5]

发表日期

• 2011 [1]
• 2009 [2]
• 2008 [3]
• 2007 [1]
• 2006 [3]
• 2005 [2]
• 更多

学科主题

• 半导体材料 [57]

筛选

浏览/检索结果: 共57条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者:  Jia CH;  Song HP 收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05 Anisotropy  Crystal morphology  Metalorganic chemical vapor deposition  a-Plane InN  INDIUM NITRIDE  MOVPE GROWTH  CUBIC INN  SAPPHIRE  GAN  MBE   Growth behavior of AlInGaN films 期刊论文  OAI收割 journal of crystal growth, 2009, 卷号: 311, 期号: 3, 页码: 474-477 Shang JZ; Zhang BP; Mao MH; Cai LE; Zhang JY; Fang ZL; Liu BL; Yu JZ; Wang QM; Kusakabe K; Ohkawa K 收藏  |  浏览/下载：216/66  |  提交时间：2010/03/08 Scanning electron microscope  Strain  X-ray diffraction  AlInGaN   Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文  OAI收割 materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237 作者:  Zhao J 收藏  |  浏览/下载：43/4  |  提交时间：2011/07/05 ZnO  Pulsed laser deposition  X-ray diffraction  Photoluminescence  Reflection high-energy electron diffraction  PULSED-LASER DEPOSITION  THIN-FILMS  PLD TECHNIQUE  GROWTH  SAPPHIRE  TEMPERATURE   The growth temperatures dependence of optical and electrical properties of InN films 期刊论文  OAI收割 science in china series g-physics mechanics & astronomy, 2008, 卷号: 51, 期号: 3, 页码: 237-242 Liu, B; Zhang, R; Xie, ZL; Xiu, XQ; Li, L; Kong, JY; Yu, HQ; Han, P; Gu, SL; Shi, Y; Zheng, YD; Tang, CG; Chen, YH; Wang, ZG 收藏  |  浏览/下载：48/2  |  提交时间：2010/03/08 metalorganic chemical vapor deposition  X-ray diffraction  photoluminescence   Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method 期刊论文  OAI收割 journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645 Wei, XC; Zhao, YW; Dong, ZY; Li, JM 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/08 defects  X-ray diffraction  growth from vapor  oxides  semiconducting II-VI materials   Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition 期刊论文  OAI收割 thin solid films, 2008, 卷号: 516, 期号: 6, 页码: 925-928 Zhang, PF; Wei, HY; Cong, GW; Hu, WG; Fan, HB; Wu, JJ; Zhu, QS; Liu, XL 收藏  |  浏览/下载：28/3  |  提交时间：2010/03/08 X-ray diffraction  metal-organic chemical vapor deposition  zinc oxide  structural properties   InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475 Gao FB (Gao Fubao); Chen NF (Chen NuoFu); Liu L (Liu Lei); Zhang XW (Zhang X. W.); Wu JL (Wu Jinliang); Yin ZG (Yin Zhigang) 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29 crystal structure   Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 290, 期号: 1, 页码: 56-60 作者:  Yin ZG 收藏  |  浏览/下载：54/0  |  提交时间：2010/04/11 crystal structure  thermal annealing  X-ray diffraction  RF magnetron sputtering  zinc oxide  semiconducting II-VI materials  P-TYPE ZNO  SPRAY-PYROLYSIS  ZINC-OXIDE   High-precision determination of lattice constants and structural characterization of InN thin films 期刊论文  OAI收割 journal of vacuum science & technology a, 2006, 卷号: 24, 期号: 2, 页码: 275-279 Wu MF; Zhou SQ; Vantomme A; Huang Y; Wang H; Yang H 收藏  |  浏览/下载：108/0  |  提交时间：2010/04/11 X-RAY-DIFFRACTION  BAND-GAP  EPITAXIAL LAYERS  INDIUM NITRIDE  HEXAGONAL INN  CUBIC INN  GROWTH  PARAMETERS  INGAN  PHASE   ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target 期刊论文  OAI收割 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845 Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun) 收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11 ZnO  pulsed laser deposition  oxygen pressure  annealing  X-ray diffraction  photoluminescence  ULTRAVIOLET EMISSION  ROOM-TEMPERATURE  ZINC-OXIDE