机构

• 半导体研究所 [20]

采集方式

• OAI收割 [13]
• iSwitch采集 [7]

内容类型

• 期刊论文 [17]
• 会议论文 [3]

发表日期

• 2006 [20]

学科主题

• 半导体材料 [12]
• 光电子学 [1]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位    发表日期：2006     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Visible blind p(+)-pi-n(-)-n(+) ultraviolet photodetectors based on 4h-sic homoepilayers 期刊论文  iSwitch采集 Microelectronics journal, 2006, 卷号: 37, 期号: 11, 页码: 1396-1398 作者:  Liu, X. F.;  Sun, G. S.;  Li, J. M.;  Ning, J.;  Luo, M. C. 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 4h-sic  P(+)-pi-n(-)-n(+)  Photodector  Visible blind   Electrical properties of undoped in0.53ga0.47as grown on inp substrates by molecular beam epitaxy 期刊论文  iSwitch采集 Journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 作者:  Cui, L. J.;  Zeng, Y. P.;  Wang, B. Q.;  Zhu, Z. P. 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Characterization  Point defects  Molecular beam epitaxy  Semiconducting gallium compounds  Semiconducting indium compounds  Semiconducting ternary compounds   Correlation between optical and electrical properties in in0.52al0.48as/inxga1-xas metamorphic high-electron-mobility-transistor structures on gaas substrates 期刊论文  iSwitch采集 Journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: 4 作者:  Cui, L. J.;  Zeng, Y. P.;  Wang, B. Q.;  Zhu, Z. P.;  Guo, S. L. 收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12 Nanoelectronic devices-resonant tunnelling diodes grown on inp substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文  iSwitch采集 Chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang, Y;  Zeng, YP;  Ma, L;  Wang, BQ;  Zhu, ZP 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Resonant tunnelling diode  Inp substrate  Molecular beam epitaxy  High resolution transmission electron microscope   Spectral dependence of spin photocurrent and current-induced spin polarization in an ingaas/inalas two-dimensional electron gas 期刊论文  iSwitch采集 Physical review letters, 2006, 卷号: 96, 期号: 18, 页码: 4 作者:  Yang, CL;  He, HT;  Ding, L;  Cui, LJ;  Zeng, YP 收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12 Resonant tunnelling diodes and high electron mobility transistors integrated on gaas substrates 期刊论文  iSwitch采集 Chinese physics letters, 2006, 卷号: 23, 期号: 3, 页码: 697-700 作者:  Huang, YL;  Ma, L;  Yang, FH;  Wang, LC;  Zeng, YP 收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12 Morphological defects and uniformity issues of 4h-sic homoepitaxial layers grown on off-oriented (0001)si faces 期刊论文  iSwitch采集 Materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278 作者:  Sun, G. S.;  Liu, X. F.;  Gong, Q. C.;  Wang, L.;  Zhao, W. S. 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 4h-sic  Homoepitaxial layers  Surface morphological defect  Optical microscopy   Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.); Guo SL (Guo S. L.); Chu JH (Chu J. H.) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 QUANTUM-WELL STRUCTURES  PHOTOLUMINESCENCE SPECTRA  HEMTS   Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.) 收藏  |  浏览/下载：20/0  |  提交时间：2010/04/11 characterization  point defects  molecular beam epitaxy  semiconducting gallium compounds  semiconducting indium compounds  semiconducting ternary compounds  1.55 MU-M  QUANTUM-WELLS  TEMPERATURE  GAAS   A small signal equivalent circuit model for resonant tunnelling diode 期刊论文  OAI收割 chinese physics letters, 2006, 卷号: 23, 期号: 8, 页码: 2292-2295 Ma L (Ma Long); Huang YL (Huang Ying-Long); Zhang Y (Zhang Yang); Wang LC (Wang Liang-Chen); Yang FH (Yang Fu-Hua); Zeng YP (Zeng Yi-Ping) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 TRANSISTORS  POWER