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CAS IR Grid
机构
半导体研究所 [17]
金属研究所 [1]
高能物理研究所 [1]
西安光学精密机械研究... [1]
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OAI收割 [15]
iSwitch采集 [5]
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期刊论文 [17]
会议论文 [3]
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2011 [3]
2007 [2]
2006 [2]
2005 [3]
2004 [2]
2003 [1]
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学科主题
半导体材料 [10]
Crystallog... [1]
光电子学 [1]
半导体物理 [1]
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Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
期刊论文
OAI收割
materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011
作者:
Hu, Qiang
;
Wei, Tongbo
;
Duan, Ruifei
;
Yang, Jiankun
;
Huo, Ziqiang
  |  
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2012/06/14
Carrier concentration
Etching
Gallium alloys
Optical properties
Point defects
Raman spectroscopy
Semiconducting gallium compounds
Vapor phase epitaxy
Vapors
Carrier Concentration
Etching
Gallium Alloys
Optical Properties
Point Defects
Raman Spectroscopy
Semiconducting Gallium Compounds
Vapor Phase Epitaxy
Vapors
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
OAI收割
physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155
作者:
Liu CR
;
Li JB
;
Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn
;
jbli@semi.ac.cn
  |  
收藏
  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
First Principle Calculation
Indium Nitride
Band Gap
Defect
Initio Molecular-dynamics
Augmented-wave Method
Indium Nitride
Gap
Pseudopotentials
Semiconductors
Impurities
Absorption
Defects
Alloys
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002
作者:
Zhang, Yu
;
Wang, Guowei
;
Tang, Bao
;
Xu, Yingqiang
;
Xu, Yun
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/06/14
Buffer layers
Epitaxial growth
Gallium alloys
Indium antimonides
Molecular beam epitaxy
Molecular beams
Optical waveguides
Optimization
Semiconducting gallium arsenide
Semiconductor quantum wells
Tellurium
Tellurium compounds
Buffer Layers
Epitaxial Growth
Gallium Alloys
Indium Antimonides
Molecular Beam Epitaxy
Molecular Beams
Optical Waveguides
Optimization
Semiconducting Gallium Arsenide
Semiconductor Quantum Wells
Tellurium
Tellurium Compounds
Effect of growth conditions on the gan thin film by sputtering deposition
期刊论文
iSwitch采集
Journal of crystal growth, 2007, 卷号: 299, 期号: 2, 页码: 268-271
作者:
Zhang, C. G.
;
Bian, L. F.
;
Chen, W. D.
;
Hsu, C. C.
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/05/12
Phase equilibria
Radio-frequency magnetron sputtering
Sputtering
Gallium compounds
Gallium nitride
Semiconducting gallium compounds
Semiconducting iii-v materials
Three-dimensional dendrite-like nanostructures of gallium nitride
期刊论文
OAI收割
Journal of Crystal Growth, 2007, 卷号: 308, 期号: 1, 页码: 166-169
Q. F. Meng
;
C. B. Jiang
;
S. X. Mao
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/04/13
nanostructures
gallium compounds
nanomaterials
semiconducting
materials
thermal evaporation
nanowire networks
zinc-oxide
gan
nanobelts
nanorods
zno
Electrical properties of undoped in0.53ga0.47as grown on inp substrates by molecular beam epitaxy
期刊论文
iSwitch采集
Journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
作者:
Cui, L. J.
;
Zeng, Y. P.
;
Wang, B. Q.
;
Zhu, Z. P.
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/05/12
Characterization
Point defects
Molecular beam epitaxy
Semiconducting gallium compounds
Semiconducting indium compounds
Semiconducting ternary compounds
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
期刊论文
OAI收割
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/04/11
characterization
point defects
molecular beam epitaxy
semiconducting gallium compounds
semiconducting indium compounds
semiconducting ternary compounds
1.55 MU-M
QUANTUM-WELLS
TEMPERATURE
GAAS
Realization of gaas/algaas quantum-cascade lasers with high average optical power
期刊论文
iSwitch采集
Solid-state electronics, 2005, 卷号: 49, 期号: 12, 页码: 1961-1964
作者:
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/05/12
X-ray diffraction
Molecular beam epitaxy
Semiconducting gallium compounds
Quantum-cascade lasers (qcls)
Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction
期刊论文
OAI收割
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 285, 期号: 3, 页码: 333-338
作者:
Hu, CY
;
Qin, ZX
;
Chen, ZZ
;
Yang, ZJ
;
Yu, TJ
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2016/06/27
x-ray diffraction
gallium compounds
metals
nitrides
semiconducting III-V materials
Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power
期刊论文
OAI收割
solid-state electronics, 2005, 卷号: 49, 期号: 12, 页码: 1961-1964
Liu JQ
;
Liu FQ
;
Lu XZ
;
Guo Y
;
Wang ZG
收藏
  |  
浏览/下载:298/3
  |  
提交时间:2010/04/11
X-ray diffraction
molecular beam epitaxy
semiconducting gallium compounds
quantum-cascade lasers (QCLs)
UNIPOLAR SEMICONDUCTOR-LASERS
MU-M
OPERATION