机构

• 半导体研究所 [5]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [5]

发表日期

• 2011 [5]

学科主题

• 半导体材料 [5]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料    发表日期：2011     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films 期刊论文  OAI收割 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 Zhang, Feng; Sun, Guosheng; Huang, Huolin; Wu, Zhengyun; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Zheng, Liu; Dong, Lin; Zeng, Yiping 收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14 Integrated circuits  Metal insulator boundaries  Photodetectors  Semiconducting silicon compounds  Semiconductor insulator boundaries  Silicon carbide   High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films 期刊论文  OAI收割 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 Zhang F (Zhang Feng); Sun GS (Sun Guosheng); Huang HL (Huang Huolin); Wu ZY (Wu Zhengyun); Wang L (Wang Lei); Zhao WS (Zhao Wanshun); Liu XF (Liu Xingfang); Yan GG (Yan Guoguo); Zheng L (Zheng Liu); Dong L (Dong Lin); Zeng YP (Zeng Yiping) 收藏  |  浏览/下载：15/0  |  提交时间：2012/02/22 Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：27/0  |  提交时间：2012/06/14 Aluminum  Annealing  Ion implantation  Pressure effects  Semiconducting silicon compounds  Silicon carbide  Surface roughness   Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001 Yan, Guoguo; Sun, Guosheng; Wu, Hailei; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14 Chemical vapor deposition  Deposition  Electric resistance  Epitaxial growth  Film growth  Sheet resistance  Silicon carbide  Silicon wafers   High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14 Epitaxial growth  Ethylene  Growth rate  Morphology  Surface roughness