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  • 半导体器件 [14]
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Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage 期刊论文  OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 2014, 卷号: 47, 47, 期号: 11, 页码: 115102, 115102
作者:  Tian, T;  Wang, LC;  Guo, EQ;  Liu, ZQ;  Zhan, T
  |  收藏  |  浏览/下载：23/0  |  提交时间：2015/04/02
Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2014, 2014, 卷号: 115, 115, 期号: 8, 页码: 083112, 083112
作者:  Li, Z;  Kang, JJ;  Wang, BW;  Li, HJ;  Weng, YH
  |  收藏  |  浏览/下载：26/0  |  提交时间：2015/03/19
Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes 期刊论文  OAI收割
optics express, OPTICS EXPRESS, 2014, 2014, 卷号: 22, 22, 期号: 9, 页码: a1001-a1008, A1001-A1008
作者:  Ji, XL;  Wei, TB;  Yang, FH;  Lu, HX;  Wei, XC
  |  收藏  |  浏览/下载：14/0  |  提交时间：2015/04/02
Annealed InGaN green light-emitting diodes with graphene transparent conductive electrodes 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2012, 2012, 卷号: 111, 111, 期号: 11, 页码: 114501, 114501
作者:  Zhang, YY;  Wang, LC;  Li, X;  Yi, XY;  Zhang, N
  |  收藏  |  浏览/下载：5/0  |  提交时间：2013/03/17
Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2012, 2012, 卷号: 101, 101, 期号: 13, 页码: 131101, 131101
作者:  Ma J (Ma, Jun);  Ji XL (Ji, Xiaoli);  Wang GH (Wang, Guohong);  Wei XC (Wei, Xuecheng);  Lu HX (Lu, Hongxi)
  |  收藏  |  浏览/下载：22/0  |  提交时间：2013/03/27
Interface and transport properties of GaN/graphene junction in GaN-based LEDs 期刊论文  OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 2012, 卷号: 45, 45, 期号: 50, 页码: 505102, 505102
作者:  Wang LC (Wang, Liancheng);  Zhang YY (Zhang, Yiyun);  Li X (Li, Xiao);  Liu ZQ (Liu, Zhiqiang);  Guo EQ (Guo, Enqing)
  |  收藏  |  浏览/下载：15/0  |  提交时间：2013/03/20
Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2012, 2012, 卷号: 101, 101, 期号: 6, 页码: 061102, 061102
作者:  Wang LC (Wang, Liancheng);  Zhang YY (Zhang, Yiyun);  Li X (Li, Xiao);  Liu ZQ (Liu, Zhiqiang);  Guo EQ (Guo, Enqing)
  |  收藏  |  浏览/下载：18/0  |  提交时间：2013/04/02
Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface 期刊论文  OAI收割
optics express, OPTICS EXPRESS, 2012, 2012, 卷号: 20, 20, 期号: 17, 页码: 18537-18544, 18537-18544
作者:  Sun B (Sun, Bo);  Zhao LX (Zhao, Lixia);  Wei TB (Wei, Tongbo);  Yi XY (Yi, Xiaoyan);  Liu ZQ (Liu, Zhiqiang)
  |  收藏  |  浏览/下载：10/0  |  提交时间：2013/04/02
A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文  OAI收割
chinese physics letters, 2010, 卷号: 27, 期号: 4, 页码: art. no. 047801
Tang GH (Tang Guang-Hua); Xu B (Xu Bo); Jiang; LW (Jiang Li-Wen); Kong JX (Kong Jin-Xia); Kong; N (Kong Ning); Liang DC (Liang De-Chun); Liang P (Liang Ping); Ye XL (Ye Xiao-Ling); Jin P (Jin Peng); Liu FQ (Liu Feng-Qi); Chen YH (Chen Yong-Hai); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：270/36  |  提交时间：2010/04/28
The performance enhancement in organic light-emitting diode using a semicrystalline composite for hole injection 期刊论文  OAI收割
chinese physics b, 2008, 卷号: 17, 期号: 7, 页码: 2725-2729
Cao JS; Guan M; Cao GH; Zeng YP; Li JM; Qin DS
收藏  |  浏览/下载：52/0  |  提交时间：2010/03/08