机构

• 半导体研究所 [55]

采集方式

• OAI收割 [55]

内容类型

• 期刊论文 [50]
• 会议论文 [5]

发表日期

• 2016 [1]
• 2014 [6]
• 2013 [4]
• 2012 [7]
• 2011 [6]
• 2010 [6]
• 更多

学科主题

• 半导体材料 [55]

筛选

浏览/检索结果: 共55条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles 期刊论文  OAI收割 applied surface science, 2016, 卷号: 388, 页码: 584-588 H.L. Kang; J.B. Lao; Z.P. Li; W.Q. Yao; C. Liu; J.Y. Wang 收藏  |  浏览/下载：21/0  |  提交时间：2017/03/10 Spin depolarization under low electric fields at low temperatures in undoped InGaAs/AlGaAs multiple quantum well 期刊论文  OAI收割 applied physics letters, 2014, 卷号: 105, 期号: 15, 页码: 152103 Zhu, LP; Liu, Y; Jiang, CY; Yu, JL; Gao, HS; Ma, H; Qin, XD; Li, Y; Wu, Q; Chen, YH 收藏  |  浏览/下载：19/0  |  提交时间：2015/03/20 Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor 期刊论文  OAI收割 journal of alloys and compounds, 2014, 卷号: 605, 页码: 113-117 Li, W; Wang, XL; Qu, SQ; Wang, Q; Xiao, HL; Wang, CM; Peng, EC; Hou, X; Wang, ZG 收藏  |  浏览/下载：15/0  |  提交时间：2015/03/25 Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector 期刊论文  OAI收割 chinese science bulletin, 2014, 卷号: 59, 期号: 28, 页码: 3696-3700 Li, Q; Ma, WQ; Zhang, YH; Cui, K; Huang, JL; Wei, Y; Liu, K; Cao, YL; Wang, WY; Liu, YL; Jin, P 收藏  |  浏览/下载：20/0  |  提交时间：2015/03/20 4-lambda InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width 期刊论文  OAI收割 optics express, 2014, 卷号: 22, 期号: 5, 页码: 5448-5454 Tao, L; Yuan, LJ; Li, YP; Yu, HY; Wang, BJ; Kan, Q; Chen, WX; Pan, JQ; Ran, GZ; Wang, W 收藏  |  浏览/下载：17/0  |  提交时间：2015/04/02 Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well 期刊论文  OAI收割 nanoscale research letters, 2014, 卷号: 9, 页码: 493 Zhu, LP; Liu, Y; Gao, HS; Qin, XD; Li, Y; Wu, Q; Chen, YH 收藏  |  浏览/下载：14/0  |  提交时间：2015/03/25 Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文  OAI收割 journal of applied physics, 2014, 卷号: 116, 期号: 5, 页码: 054502 Yan, JD; Wang, XL; Wang, Q; Qu, SQ; Xiao, HL; Peng, EC; Kang, H; Wang, CM; Feng, C; Yin, HB; Jiang, LJ; Li, BQ; Wang, ZG; Hou, X 收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25 Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 102, 期号: 19, 页码: 192109 - 192109-5 G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen 收藏  |  浏览/下载：13/0  |  提交时间：2014/02/12 Nanotetrapods: quantum dot hybrid for bulk heterojunction solar cells 期刊论文  OAI收割 nanoscale research letters, 2013, 卷号: 8, 期号: 1, 页码: 434 Tan F, Qu S, Li F, Jiang Q, Chen C, Zhang W, Wang Z. 收藏  |  浏览/下载：9/0  |  提交时间：2014/03/18 Effect of the thickness of Bi2Se3 sheets on the morphologies of Bi2Se3–ZnS nanocomposites and improved photoresponsive characteristic 期刊论文  OAI收割 J Mater Sci: Mater Electron, J Mater Sci: Mater Electron, 2013, 2013, 卷号: 24, 24, 页码: 4197–4203, 4197–4203 作者:  R. X. Li;  M. L. Wang;  X. Q. Meng;  Z. M. Wei   |  收藏  |  浏览/下载：13/0  |  提交时间：2015/05/11