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Chinese Academy of Sciences Institutional Repositories Grid
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Filtering performance improvement in V-doped ZnO/diamond surface acoustic wave filters 外文期刊  OAI收割
2010
作者:  
Luo, JT;  Zeng, F;  Pan, F;  Li, HF;  Niu, JB
  |  收藏  |  浏览/下载:11/0  |  提交时间:2010/11/26
Silicon nanocrystals synthesized by electron-beam co-evaporation method and their application for nonvolatile memory 外文期刊  OAI收割
2009
作者:  
Jia, R;  Chen, C;  Liu, M;  Li, WL;  Zhu, CX
  |  收藏  |  浏览/下载:14/0  |  提交时间:2010/11/26
Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2) 外文期刊  OAI收割
2009
作者:  
Li, WL;  Jia, R;  Chen, C;  Wu, NJ;  Tamotsu, H
  |  收藏  |  浏览/下载:16/0  |  提交时间:2010/11/26
Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films 外文期刊  OAI收割
2008
作者:  
Li, ZG;  Guan, WH;  Liu, M;  Long, SB;  Jia, R
  |  收藏  |  浏览/下载:11/0  |  提交时间:2010/11/26
Memory  Oxide  Fabrication  Er  
Comparison of discrete-storage nonvolatile memories: advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory 外文期刊  OAI收割
2008
作者:  
Wang, Q;  Jia, R;  Guan, W;  Li, W;  Liu, Q
  |  收藏  |  浏览/下载:13/0  |  提交时间:2010/11/26
Metal  
Controllable and reproducible fabrication of high anisotropic organic field effect transistors 外文期刊  OAI收割
2008
作者:  
Shang, LW;  Liu, M;  Tu, DY;  Zhen, LJ;  Liu, G
  |  收藏  |  浏览/下载:15/0  |  提交时间:2010/11/26
A novel opto-mechanical uncooled infrared detector 外文期刊  OAI收割
2007
作者:  
Jia, BB;  Li, CB;  Chen, DP;  Ye, TC;  Shi, SL
  |  收藏  |  浏览/下载:18/0  |  提交时间:2010/11/26
Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing 外文期刊  OAI收割
2007
作者:  
Li, ZG;  Long, SB;  Liu, M;  Wang, CS;  Jia, R
  |  收藏  |  浏览/下载:14/0  |  提交时间:2010/11/26
Modeling of retention characteristics for metal and semiconductor nanocrystal memories 外文期刊  OAI收割
2007
作者:  
Guan, WH;  Long, SB;  Liu, M;  Liu, Q;  Hu, Y
  |  收藏  |  浏览/下载:10/0  |  提交时间:2010/11/26
Surface-induced large side-gating phenomenon in GaAs quantum wire transistors and its removal by surface passivation using Si interface control layer 外文期刊  OAI收割
2007
作者:  
Jia, R;  Kasai, S;  Wang, Q;  Long, SB;  Bin Niu, J
  |  收藏  |  浏览/下载:12/0  |  提交时间:2010/11/26