中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
  • 2018 [5]
学科主题
筛选

浏览/检索结果: 共5条,第1-5条 帮助

限定条件    
条数/页: 排序方式:
Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文  OAI收割
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450
作者:  
Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
  |  收藏  |  浏览/下载:28/0  |  提交时间:2019/11/15
Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文  OAI收割
Applied Physics A, 2018, 卷号: 124, 期号: 2, 页码: 130
作者:  
Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Fangzheng Li;  Hongyuan Wei;  Shaoyan Yang;  Zhanguo Wang
  |  收藏  |  浏览/下载:27/0  |  提交时间:2019/11/15
Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters 期刊论文  OAI收割
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455
作者:  
Meng Yulin;  Wang Lianshan;  Zhao Guijuan;  Li Fangzheng;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
  |  收藏  |  浏览/下载:28/0  |  提交时间:2019/11/15
Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 5, 页码: 052105
作者:  
Guijuan Zhao;   Lianshan Wang;   Huijie Li;   Yulin Meng;   Fangzheng Li;   Shaoyan Yang;   Zhanguo Wang
  |  收藏  |  浏览/下载:27/0  |  提交时间:2019/11/15
The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition 期刊论文  OAI收割
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7484-7488
作者:  
Li Fangzheng;  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Chen Yanan;  Yang Shaoyan;  Jin Peng;  Wang Zhanguo
  |  收藏  |  浏览/下载:27/0  |  提交时间:2019/11/15