机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [11]

发表日期

• 2017 [4]
• 2016 [4]
• 2015 [2]
• 2013 [1]

学科主题

• 半导体材料 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping 期刊论文  OAI收割 SCIENTIFIC REPORTS, 2017, 卷号: 7, 页码: 4497 作者:  Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Zesheng Ji 收藏  |  浏览/下载：30/0  |  提交时间：2018/05/23 Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer 期刊论文  OAI收割 Superlattices and Microstructures, 2017, 卷号: 110, 页码: 324-329 作者:  Fangzheng Li;  Lianshan Wang;  Guijuan Zhao;  Yulin Meng;  Huijie Li 收藏  |  浏览/下载：19/0  |  提交时间：2018/05/23 Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer 期刊论文  OAI收割 Superlattices and Microstructures, 2017, 卷号: 110, 页码: 324-329 作者:  Fangzheng Li;  Lianshan Wang;  Guijuan Zhao 收藏  |  浏览/下载：22/0  |  提交时间：2018/05/23 Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition 期刊论文  OAI收割 Chinese Physics B, 2017, 卷号: 26, 期号: 7, 页码: 078102 作者:  Zesheng Ji;  Lianshan Wang;  Guijuan Zhao;  Yulin Meng;  Fangzheng Li 收藏  |  浏览/下载：19/0  |  提交时间：2018/05/23 The immiscibility of InAlN ternary alloy 期刊论文  OAI收割 scientific reports, 2016, 卷号: 6, 页码: 26600 Guijuan Zhao; Xiaoqing Xu; Huijie Li; Hongyuan Wei; Dongyue Han; Zesheng Ji; Yulin Meng; Lianshan Wang; Shaoyan Yang 收藏  |  浏览/下载：23/0  |  提交时间：2017/03/10 Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates 期刊论文  OAI收割 nanoscale res lett, 2016, 卷号: 11, 期号: 1, 页码: 270 Huijie Li; Guijuan Zhao; Hongyuan Wei; Lianshan Wang; Zhen Chen; Shaoyan Yang 收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10 Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers 期刊论文  OAI收割 scientific reports, 2016, 卷号: 6, 页码: 20787 Guijuan Zhao; Lianshan Wang; Shaoyan Yang; Huijie Li; Hongyuan Wei; Dongyue Han; Zhanguo Wang 收藏  |  浏览/下载：26/0  |  提交时间：2017/03/10 Morphology Controlled Fabrication of InN Nanowires on Brass Substrates 期刊论文  OAI收割 nanomaterials, 2016, 卷号: 6, 期号: 11, 页码: 195 Huijie Li; Guijuan Zhao; Lianshan Wang; Zhen Chen; Shaoyan Yang 收藏  |  浏览/下载：8/0  |  提交时间：2017/03/10 Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned 期刊论文  OAI收割 nanoscale, 2015, 卷号: 7, 期号: 39, 页码: 16481-16492 Huijie Li; Guijuan Zhao; Susu Kong; Dongyue Han; Hongyuan Wei; Lianshan Wang; Zhen Chen; Shaoyan Yang 收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29 Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures 期刊论文  OAI收割 physica e: low-dimensional systems and nanostructures, 2015, 卷号: 66, 页码: 116-119 Huijie Li; Guipeng Liu; Guijuan Zhao; Hongyuan Wei; Lianshan Wang; Shaoyan Yang; Zhen Chen; Zhanguo Wang 收藏  |  浏览/下载：18/0  |  提交时间：2016/03/29