中国科学院机构知识库网格系统: 检索

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	Dielectric and barrier thickness fluctuation scattering in Al2O3AlGaNGaN double 期刊论文 OAI收割 thin solid films, 2013, 卷号: 534, 页码: 655–658 Dong Jia, Yanwu Lu , Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang 收藏 \| 浏览/下载：19/0 \| 提交时间：2014/03/18
	Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文 OAI收割 solid state communications, 2013, 卷号: 153, 期号: 1, 页码: 53-57 Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/10/10
	Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文 OAI收割 thin solid films, 2013, 卷号: 534, 页码: 655–658 Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang 收藏 \| 浏览/下载：17/0 \| 提交时间：2014/05/08
	Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文 OAI收割 thin solid films, 2013, 卷号: 534, 页码: 655-658 Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/08/27
	Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors 期刊论文 OAI收割 journal of applied physics, 2012, 卷号: 112, 页码: 024515 Ji, Dong; Lu, Yanwu; Liu, Bing; Jin, Guangri; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏 \| 浏览/下载：14/0 \| 提交时间：2013/05/07
	Polarization-induced remote interfacial charge scattering in Al 2O3/AlGaN/GaN double heterojunction high electron mobility transistors 期刊论文 OAI收割 applied physics letters, 2012, 卷号: 100, 期号: 13, 页码: 132105 Ji, Dong; Liu, Bing; Lu, Yanwu; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/05/13