机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [9]
• 会议论文 [2]

发表日期

• 2011 [1]
• 2010 [2]
• 2009 [2]
• 2008 [1]
• 2005 [1]
• 2002 [1]
• 更多

学科主题

• 半导体材料 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402 Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06 FUNDAMENTAL-BAND GAP  INDIUM NITRIDE  BUFFER LAYER  DEPENDENCE  SAPPHIRE  MOCVD   STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS 会议论文  OAI收割 34th ieee photovoltaic specialists conference, philadelphia, pa, 2009 Peng WB (Peng Wenbo); Zeng XB (Zeng Xiangbo); Liu SY (Liu Shiyong); Xiao HB (Xiao Haibo); Kong GL (Kong Guanglin); Yu YD (Yu Yude); Liao XB (Liao Xianbo) 收藏  |  浏览/下载：252/64  |  提交时间：2010/08/16 Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文  OAI收割 applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143 Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG 收藏  |  浏览/下载：196/52  |  提交时间：2010/04/28 BAND-GAP  TEMPERATURE-DEPENDENCE  ENERGY  SEMICONDUCTORS  SPECTRA  EPITAXY  GROWTH  LAYERS   Design and characteristics of quantum cascade laser-based CO detection system 期刊论文  OAI收割 sensors and actuators b-chemical, 2009, 卷号: 142, 期号: 1, 页码: 33-38 Li L; Cao; F; Wang YD; Cong ML; Li L; An YP; Song ZY; Guo SX; Liu FQ; Wang LJ 收藏  |  浏览/下载：37/0  |  提交时间：2010/04/05 CO  QC laser  Optical detection systems  Absorption spectroscopy  Chemical sensors  ABSORPTION-SPECTROSCOPY  GAS-DETECTION  NITRIC-OXIDE  MU-M  SENSOR  OXYGEN   Gap states and microstructure of microcrystalline silicon thin films 期刊论文  OAI收割 acta physica sinica, 2009, 卷号: 58, 期号: 8, 页码: 5716-5720 Peng WB; Liu SY; Xiao HB; Zhang CS; Shi MJ; Zeng XB; Xu YY; Kong GL; Yu YD 收藏  |  浏览/下载：85/3  |  提交时间：2010/03/08 gap states  grain boundary  microcrystalline silicon  modulated photocurrent   The growth temperatures dependence of optical and electrical properties of InN films 期刊论文  OAI收割 science in china series g-physics mechanics & astronomy, 2008, 卷号: 51, 期号: 3, 页码: 237-242 Liu, B; Zhang, R; Xie, ZL; Xiu, XQ; Li, L; Kong, JY; Yu, HQ; Han, P; Gu, SL; Shi, Y; Zheng, YD; Tang, CG; Chen, YH; Wang, ZG 收藏  |  浏览/下载：47/2  |  提交时间：2010/03/08 metalorganic chemical vapor deposition  X-ray diffraction  photoluminescence   Comment on 期刊论文  OAI收割 applied physics letters, 2005, 卷号: 87, 期号: 17, 页码: art.no.176101 Liu B; Zhang R; Xie ZL; Xiu XQ; Bi ZX; Gu SL; Shi Y; Zheng YD; Hu LJ; Chen YH; Wang ZG 收藏  |  浏览/下载：123/32  |  提交时间：2010/03/17 Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 236, 期号: 1-3, 页码: 261-266 Tan LW; Zan YD; Wang J; Wang QY; Yu YH; Wang SR; Liu ZL; Lin LY 收藏  |  浏览/下载：81/3  |  提交时间：2010/08/12 metalorganic chemical vapor deposition  CHEMICAL-VAPOR-DEPOSITION  EPITAXIAL-GROWTH  AL2O3 FILMS  SI   The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 484-490 Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG; Wang YT; Cheng LS; Zhang Z 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 GaN  MOVPE growth  Al2O3 coated Si substrate  crystal structure  photoluminescence spectrum  SINGLE CRYSTALLINE GAN  HIGH-QUALITY GAN  INTERMEDIATE LAYER  BUFFER LAYERS  SI  FILMS  ALN  DEPOSITION  SAPPHIRE  MOLECULAR-BEAM EPITAXY   Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates 期刊论文  OAI收割 science in china series e-technological sciences, 1998, 卷号: 41, 期号: 2, 页码: 203-207 Wang LS; Liu XG; Zan YD; Wang D; Wang J; Lu DC; Wang ZG 收藏  |  浏览/下载：29/0  |  提交时间：2010/08/12 fabrication of GaN epitaxial films  Al2O3/Si(001) substrate  metalorganic chemical deposition  crystal structure and surface morphology  photoluminescence spectrum  GROWTH  DIODES  BUFFER LAYER