机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [12]

发表日期

• 2013 [3]
• 2012 [2]
• 2011 [1]
• 2010 [6]

学科主题

• 半导体材料 [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 A mode-locked external-cavity quantum-dot laser with a variable repetition rate 期刊论文  OAI收割 chinese physics b, 2013, 卷号: 22, 期号: 10, 页码: 104206 Wu Jian, Jin Peng, Li Xin-Kun, Wei Heng, Wu Yan-Hua, Wang Fei-Fei, Chen Hong-Mei, Wu Ju, Wang Zhan-Guo 收藏  |  浏览/下载：13/0  |  提交时间：2014/03/18 A grating-coupled external cavity InAs_InP quantum dot laser with 85-nm tuning range 期刊论文  OAI收割 chinese physics b, 2013, 卷号: 22, 期号: 9, 页码: 094211 Wei Heng, Jin Peng, Luo Shuai, Ji Hai-Ming, Yang Tao, Li Xin-Kun, Wu Jian, An Qi, Wu Yan-Hua, Chen Hong-Mei, Wang Fei-Fei, Wu Ju, Wang Zhan-Guo 收藏  |  浏览/下载：17/0  |  提交时间：2014/03/18 Broadband Light Emission from Chirped Multiple InAs Quantum Dot Structur 期刊论文  OAI收割 chinese physics letters, 2013, 卷号: 30, 期号: 11, 页码: 118102 LV Xue-Qin, JIN Peng, CHEN Hong-Mei, WU Yan-Hua, WANG Fei-Fei, WANG Zhan-Guo 收藏  |  浏览/下载：15/0  |  提交时间：2014/03/18 Theoretical study of the effects of InAs/GaAs quantum dot layer 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 8, 页码: 081118 Gu, Yong-Xian; Yang, Xiao-Guang; Ji, Hai-Ming; Xu, Peng-Fei; Yang, Tao 收藏  |  浏览/下载：12/0  |  提交时间：2013/05/07 Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 8, 页码: 081118 Gu YX (Gu, Yong-Xian); Yang XG (Yang, Xiao-Guang); Ji HM (Ji, Hai-Ming); Xu PF (Xu, Peng-Fei); Yang T (Yang, Tao) 收藏  |  浏览/下载：18/0  |  提交时间：2013/04/02 The Research Progress of Quantum Dot Lasers and Photodetectors in China 期刊论文  OAI收割 journal of nanoscience and nanotechnology, 2011, 卷号: 11, 期号: 11 s1, 页码: 9345-9356 Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Xu B (Xu Bo); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/22 Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088102 Gu YX (Gu Yong-Xian); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Xu PF (Xu Peng-Fei); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：140/24  |  提交时间：2010/09/07 quantum dot  symmetrized Hamiltonian  Burt-Foreman Hamiltonian  finite element method  spurious solutions  EFFECTIVE-MASS APPROXIMATION  P THEORY   High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文  OAI收割 chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：150/30  |  提交时间：2010/04/13 THRESHOLD CURRENT  ROOM-TEMPERATURE  DEPENDENCE  PHOTOLUMINESCENCE   Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101 Cao YL (Cao Yu-Lian); Yang T (Yang Tao); Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Gu YX (Gu Yong-Xian); Wang XD (Wang Xiao-Dong); Wang Q (Wang Qing); Ma WQ (Ma Wen-Quan); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：220/51  |  提交时间：2010/05/24 excited states  gallium arsenide  III-V semiconductors  indium compounds  laser tuning  optical films  quantum dot lasers  silicon compounds  tantalum compounds  TEMPERATURE-DEPENDENCE  THRESHOLD  PERFORMANCE  GAIN   Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers 期刊论文  OAI收割 japanese journal of applied physics, 2010, 卷号: 49, 期号: 7, 页码: art. no. 072103 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：87/11  |  提交时间：2010/08/17 DEPENDENCE  WELL