机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [9]
• 会议论文 [3]

发表日期

• 2017 [2]
• 2013 [1]
• 2012 [2]
• 2002 [1]
• 2001 [2]
• 2000 [4]
• 更多

学科主题

• 半导体物理 [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Near Full-Composition-Range High-Quality GaAs1−xSbx Nanowires Grown by Molecular-Beam Epitaxy 期刊论文  OAI收割 Nano Letters, 2017, 卷号: 17, 页码: 622−630 作者:  Lixia Li;  Dong Pan;  Yongzhou Xue;  Xiaolei Wang;  Miaoling Lin 收藏  |  浏览/下载：36/0  |  提交时间：2018/07/02 Damage-free and rapid transfer of CVD-grown two-dimensional transition metal dichalcogenides by dissolving sacrificial water-soluble layers 期刊论文  OAI收割 Nanoscale, 2017, 卷号: 9, 页码: 19124 作者:  Lili Zhang;  Chenyu Wang;  Xue-Lu Liu;  Tao Xu;  Mingsheng Long 收藏  |  浏览/下载：54/0  |  提交时间：2018/06/15 Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles 期刊论文  OAI收割 applied physics a, Applied Physics A, 2013, 2013, 页码: 1-7, 1-7 作者:  Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu   |  收藏  |  浏览/下载：15/0  |  提交时间：2014/05/08 Structure and magnetic characteristics of Si-doped AlN films 期刊论文  OAI收割 journal of alloys and compounds, JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 2012, 卷号: 519, 519, 页码: 41-46, 41-46 作者:  Pan, D;  Jian, JK;  Sun, YF;  Wu, R   |  收藏  |  浏览/下载：7/0  |  提交时间：2013/02/07 Structure and magnetic properties of Ni-doped AlN films 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2012, 2012, 卷号: 112, 112, 期号: 5, 页码: 053911, 053911 作者:  Pan D (Pan, D.);  Jian JK (Jian, J. K.);  Ablat A (Ablat, A.);  Li J (Li, J.);  Sun YF (Sun, Y. F.)   |  收藏  |  浏览/下载：9/0  |  提交时间：2013/04/02 The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文  OAI收割 international workshop on nitride semiconductors (iwn 2002), aachen, germany, jul 22-25, 2002 作者:  Jiang DS 收藏  |  浏览/下载：16/2  |  提交时间：2010/10/29 LUMINESCENCE  LOCALIZATION   Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration 期刊论文  OAI收割 applied physics letters, 2001, 卷号: 78, 期号: 15, 页码: 2217-2219 作者:  Jiang DS 收藏  |  浏览/下载：104/6  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  INGAASN  LASER  OPERATION  ALLOYS  GROWTH  GAAS   Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Jiang DS 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 molecular beam epitaxy  quantum wells  semiconducting IIIV materials  LUMINESCENCE  GAASN   Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells 期刊论文  OAI收割 applied physics letters, 2000, 卷号: 77, 期号: 25, 页码: 4148-4150 作者:  Jiang DS 收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  GAASN   Electro-optical properties and temporal stability of the guest-host DCNP/PEK-c polymer thin film 期刊论文  OAI收割 chinese physics letters, 2000, 卷号: 17, 期号: 1, 页码: 22-24 Shi W; Fang CS; Pan QW; Sun X; Gu QT; Xu D; Wei HZ; Yu JZ 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 NONLINEARITY