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  • 半导体材料 [7]
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Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier 期刊论文  OAI收割
applied physics express, 2013, 卷号: 6, 期号: 5, 页码: 051201
Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu; Wang, Cuimei; Wang, Xiaoliang
收藏  |  浏览/下载:10/0  |  提交时间:2013/08/27
AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band 期刊论文  OAI收割
半导体学报, 2007, 卷号: 28, 期号: 4, 页码: 514-517
Yao Xiaojiang; Li Bin; Chen Yanhu; Chen Xiaojuan; Wei Ke; Li Chengzhan; Luo Weijun; WANG Xiaoliang; Liu Dan; Liu Guoguo; Liu Xinyu
收藏  |  浏览/下载:151/11  |  提交时间:2010/11/23
Structure optimization of field-plate AlGaN/GaN HEMTs 期刊论文  OAI收割
microelectronics journal, 2007, 卷号: 38, 期号: 2, 页码: 272-274
Luo WJ (Luo Weijun); Wei K (Wei Ke); Chen XJ (Chen Xiaojuan); Li CZ (Li Chengzhan); Liu XY (Liu Xinyu); Wang XL (Wang Xiaoliang)
收藏  |  浏览/下载:135/0  |  提交时间:2010/03/29
GaN  
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC 期刊论文  OAI收割
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1521-1525
作者:  
Xiao Hongling;  Wang Cuimei
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/23
A Radial Stub Test Circuit for Microwave Power Devices 期刊论文  OAI收割
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1557-1561
Luo Weijun; Chen Xiaojuan; Liang Xiaoxin; Ma Xiaolin; Liu Xinyu; Wang Xiaoliang
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/23
RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content 期刊论文  OAI收割
半导体学报, 2005, 卷号: 26, 期号: 6, 页码: 1116-1120
作者:  
Liu Jian
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/23
Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy 期刊论文  OAI收割
半导体学报, 2004, 卷号: 25, 期号: 2, 页码: 121-125
Wang Xiaoliang; Hu Guoxin; Wang Junxi; Liu Xinyu; Liu Hongxin; Sun Dianzhao; Zeng Yiping; Qian He; Li Jinmin; Kong Meiying; Lin Lanying
收藏  |  浏览/下载:20/0  |  提交时间:2010/11/23