机构

• 半导体研究所 [6]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [6]

发表日期

• 2016 [6]

学科主题

• 半导体物理 [6]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2016     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Characterization of background carriers in InAs/GaSb quantum well 期刊论文  OAI收割 journal of applied physics, 2016, 卷号: 119, 期号: 9, 页码: 095710 Junbin Li; Xiaoguang Wu; Guowei Wang; Yingqiang Xu; Zhichuan Niu; Xinhui Zhang 收藏  |  浏览/下载：16/0  |  提交时间：2017/03/16 Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well 期刊论文  OAI收割 journal of physics d: applied physics, 2016, 卷号: 49, 期号: 14, 页码: 145303 Junbin Li; Xiaoguang Wu; Guowei Wang; Yingqiang Xu; Zhichuan Niu; Xinhui Zhang 收藏  |  浏览/下载：15/0  |  提交时间：2017/03/16 Low lateral divergence 2 μm InGaSb/ AlGaAsSb broad-area quantum well lasers 期刊论文  OAI收割 Optics Express, 2016, 卷号: 24, 期号: 7, 页码: 7246-7252 Jiamin Rong; Enbo Xing; Yu Zhang; Lijie Wang; Shili Shu; Sicong Tian; Cunzhu Tong; Xiaoli Chai; Yingqiang Xu; Haiqiao Ni; Zhichuan Niu; Lijun Wang 收藏  |  浏览/下载：27/0  |  提交时间：2017/03/10 Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well 期刊论文  OAI收割 journal of physics d: applied physics, 2016, 卷号: 49, 页码: 145303 Junbin Li; Xiaoguang Wu; Guowei Wang; Yingqiang Xu; Zhichuan Niu; Xinhui Zhang 收藏  |  浏览/下载：14/0  |  提交时间：2017/03/16 Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm 期刊论文  OAI收割 applied physics letters, 2016, 卷号: 108, 期号: 12, 页码: 121110 Dongwei Jiang; Wei Xiang; Fengyun Guo; Hongyue Hao; Xi Han; Xiaochao Li; Guowei Wang; Yingqiang Xu; Qingjiang Yu; Zhichuan Niu 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10 InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate 期刊论文  OAI收割 journal of crystal growth, 2016, 卷号: 443, 页码: 85-89 Wei Xiang; Guowei Wang; Hongyue Hao; Yongping Liao; Xi Han; Lichun Zhang; Yingqiang Xu; Zhengwei Ren; Haiqiao Ni; Zhenhong He; Zhichuan Niu 收藏  |  浏览/下载：35/0  |  提交时间：2017/03/16