机构

• 半导体研究所 [10]

采集方式

• OAI收割 [10]

内容类型

• 期刊论文 [10]

发表日期

• 2017 [1]
• 2013 [6]
• 2010 [1]
• 2007 [1]
• 2006 [1]

学科主题

• 半导体材料 [10]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation 期刊论文  OAI收割 Journal of Applied Physics, 2017, 卷号: 121, 页码: 193901 作者:  X. L. Zeng;  J. L. Yu;  S. Y. Cheng;  Y. F. Lai, Y. H. Chen;  W. Huang 收藏  |  浏览/下载：36/0  |  提交时间：2018/05/23 In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy 期刊论文  OAI收割 Journal of Applied Physics, 2013, 卷号: 113, 期号: 8, 页码: 083504- 083504-5 J. L. Yu, Y. H. Chen, X. Bo, C. Y. Jiang, X. L. Ye, S. J. Wu, H. S. Gao 收藏  |  浏览/下载：14/0  |  提交时间：2014/02/12 Intrinsic photoinduced anomalous Hall effect in insulating GaAs_AlGaAs quantum wells at room temperature 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 102, 期号: 20, 页码: 202408 - 202408-5 J. L. Yu, Y. H. Chen, Y. Liu, C. Y. Jiang, H. Ma, L. P. Zhu, X. D. Qin 收藏  |  浏览/下载：18/0  |  提交时间：2014/03/18 Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method 期刊论文  OAI收割 photonics technology letters, 2013, 卷号: 25, 期号: 12, 页码: 1180 - 1183 Yuan, L. ,Tao, L.; Yu, H.; Chen, W.; Lu, D.; Li, Y.; Ran, G.; Pan, J. 收藏  |  浏览/下载：12/0  |  提交时间：2014/03/19 Observation of circular dichroism in (001)-oriented P-I-N InGaAs/GaAs quantum wells without magnetic field 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 102, 期号: 7, 页码: 072404 Yu, J. L.; Chen, Y. H.; Liu, Y.; Jiang, C. Y.; Ma, H.; Zhu, L. P.; Qin, X. D. 收藏  |  浏览/下载：14/0  |  提交时间：2013/09/22 Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 102, 期号: 6, 页码: 061112 Wang, C.; Qu, H. J.; Chen, W. X.; Ran, G. Z.; Yu, H. Y.; Niu, B.; Pan, J. Q.; Wang, W. 收藏  |  浏览/下载：15/0  |  提交时间：2013/09/22 In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy 期刊论文  OAI收割 journal of applied physics, 2013, 卷号: 113, 期号: 8, 页码: 083504 Yu, J. L.; Chen, Y. H.; Bo, X.; Jiang, C. Y.; Ye, X. L.; Wu, S. J.; Gao, H. S. 收藏  |  浏览/下载：18/0  |  提交时间：2013/09/17 In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 1, 页码: art. no. 013516 Yu JL (Yu J. L.); Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Jiang CY (Jiang C. Y.); Jia CH (Jia C. H.) 收藏  |  浏览/下载：293/18  |  提交时间：2010/08/17 MOLECULAR-BEAM EPITAXY  STRAIN RELAXATION  GROWTH TEMPERATURE  INTERFACE  ALLOYS  GAAS  HETEROSTRUCTURES  MICROSTRUCTURE  GANXAS1-X  NITROGEN   Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well 期刊论文  OAI收割 solid state communications, 2007, 卷号: 143, 期号: 6-7, 页码: 300-303 Zhou, WZ (Zhou, W. Z.); Lin, T (Lin, T.); Shang, LY (Shang, L. Y.); Yu, G (Yu, G.); Huang, ZM (Huang, Z. M.); Guo, SL (Guo, S. L.); Gui, YS (Gui, Y. S.); Dai, N (Dai, N.); Chu, JH (Chu, J. H.); Cui, LJ (Cui, L. J.); Li, DL (Li, D. L.); Gao, HL (Gao, H. L.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/29 quantum well   Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 31-35 Zhao C (Zhao C.); Chen YH (Chen Y. H.); Zhao M (Zhao Man); Zhang CL (Zhang C. L.); Xu B (Xu B.); Yu LK (Yu L. K.); Sun J (Sun J.); Lei W (Lei W.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 Monte Carlo simulation  molecular beam epitaxy  kinetic effects  quantum dot  LAYER