机构

• 半导体研究所 [85]

采集方式

• OAI收割 [85]

内容类型

• 期刊论文 [82]
• 会议论文 [3]

发表日期

• 2011 [4]
• 2010 [3]
• 2009 [6]
• 2008 [7]
• 2007 [4]
• 2006 [9]
• 更多

学科主题

• 半导体物理 [85]

筛选

浏览/检索结果: 共85条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |   Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割 optoelectronics letters, Optoelectronics Letters, 2011, 2011, 卷号: 7, 7, 期号: 5, 页码: 325-329, 325-329 作者:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng   |  收藏  |   Determining the sign of g factor via time-resolved Kerr rotation spectroscopy with a rotatable magnetic field 期刊论文  OAI收割 chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 8, 页码: 87503, 87503 作者:  Gu XF;  Qian X;  Ji Y;  Chen L;  Zhao JH   |  收藏  |   Electrically Controllable Surface Magnetism on the Surface of Topological Insulators 期刊论文  OAI收割 physical review letters, PHYSICAL REVIEW LETTERS, 2011, 2011, 卷号: 106, 106, 期号: 9, 页码: article no.97201, Article no.97201 作者:  Zhu JJ;  Yao DX;  Zhang SC;  Chang K;  Zhu, JJ, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.   |  收藏  |   Direct detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction: Utilizing the SU(2) symmetry 期刊论文  OAI收割 physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 3, 页码: art. no. 033304, Art. No. 033304 作者:  Li J (Li Jun);  Chang K (Chang Kai);  Li, J, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: kchang@red.semi.ac.cn   |  收藏  |   STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS 期刊论文  OAI收割 journal of infrared and millimeter waves, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2010, 2010, 卷号: 29, 29, 期号: 2, 页码: 87-, 87- 作者:  Yang W (Yang Wei);  Luo HH (Luo Hai-Hui);  Qian X (Qian Xuan);  Ji Y (Ji Yang);  Yang, W, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: jiyang@semi.ac.cn   |  收藏  |   Temperature dependence of hole spin relaxation in ultrathin InAs monolayers 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 2010, 卷号: 42, 42, 期号: 5, 页码: 1597-1600, 1597-1600 作者:  Li T;  Zhang XH;  Zhu YG;  Huang X;  Han LF   |  收藏  |   Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix 期刊论文  OAI收割 physical review b, 2009, 卷号: 80, 期号: 3, 页码: art. no. 035313 Yang CL; Cui XD; Shen SQ; Xu ZY; Ge WK 收藏  |   Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902 Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD 收藏  |   Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis 期刊论文  OAI收割 japanese journal of applied physics, 2009, 卷号: 48, 期号: 6, 页码: art. no. 063004 Sun L; Zhou WZ; Yu GL; Shang LY; Gao KH; Zhou YM; Lin T; Cui LJ; Zeng YP; Chu JH 收藏  |