机构

• 半导体研究所 [89]

采集方式

• OAI收割 [89]

内容类型

• 期刊论文 [83]
• 会议论文 [6]

发表日期

• 2011 [5]
• 2010 [4]
• 2009 [3]
• 2008 [4]
• 2007 [6]
• 2006 [12]
• 更多

学科主题

• 半导体材料 [49]
• 半导体物理 [28]
• 光电子学 [11]
• 半导体化学 [1]

筛选

浏览/检索结果: 共89条，第1-10条 帮助 限定条件 存缴方式：oaiharvest    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: article no.69 作者:  Song HP;  Wei HY;  Li CM;  Jiao CM 收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05 CATHODOLUMINESCENCE CHARACTERIZATION  GALLIUM NITRIDE  STRESSES  LAYERS  HETEROSTRUCTURE  DEPOSITION  CONSTANTS  MECHANISM  SAPPHIRE  STRAIN   Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文  OAI收割 nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603 作者:  Song HP 收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  SEMICONDUCTOR NANOWIRES  NITRIDE NANOTUBES  GAN  EMISSION  MECHANISM   GaN grown with InGaN as a weakly bonded layer 期刊论文  OAI收割 crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585 作者:  Wei HY;  Song HP 收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  SI(001) SUBSTRATE  STRAIN  EPITAXY   Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文  OAI收割 nano research, NANO RESEARCH, 2011, 2011, 卷号: 4, 4, 期号: 4, 页码: 343-359, 343-359 作者:  Fasoli A;  Colli A;  Martelli F;  Pisana S;  Tan PH   |  收藏  |  浏览/下载：52/5  |  提交时间：2011/07/05 CdSe  nanowires  photoluminescence  CHEMICAL-VAPOR-DEPOSITION  SHAPE-SELECTIVE SYNTHESIS  LIQUID-SOLID MECHANISM  OPTICAL-PROPERTIES  SILICON NANOWIRES  SI NANOWIRES  ZNSE NANOWIRES  SEMICONDUCTOR NANOCRYSTALS  STRUCTURAL-PROPERTIES  EPITAXIAL-GROWTH  Cdse  Nanowires  Photoluminescence  Chemical-vapor-deposition  Shape-selective Synthesis  Liquid-solid Mechanism  Optical-properties  Silicon Nanowires  Si Nanowires  Znse Nanowires  Semiconductor Nanocrystals  Structural-properties  Epitaxial-growth   Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文  OAI收割 acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 1, 页码: article no.16108, Article no.16108 作者:  Wang B;  Li ZC;  Yao R;  Liang M;  Yan FW   |  收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05 GaN-based  LED  Al composition  electron blocking layer  TEMPERATURE  ALLOYS  MOVPE  Gan-based  Led  Al Composition  Electron Blocking Layer  Temperature  Alloys  Movpe   Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文  OAI收割 physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.) 收藏  |  浏览/下载：35/0  |  提交时间：2010/12/12 InGaN  Dislocation  Metalorganic chemical vapor deposition  High resolution X-ray diffraction  Cathodoluminescence  MISFIT DISLOCATIONS  QUANTUM-WELLS  BAND-GAP  EPILAYERS  GENERATION  ALLOYS  INN   Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 applied surface science, 2010, 卷号: 256, 期号: 8, 页码: 2606-2610 作者:  Wei HY;  Jia CH;  Jiao CM;  Song HP 收藏  |  浏览/下载：156/40  |  提交时间：2010/04/04 ZnO  Metal-organic chemical vapor deposition  Infrared absorption  Surface  RAY PHOTOELECTRON-SPECTROSCOPY  POLAR-SURFACE  EPITAXY   Defects in gallium nitride nanowires: First principles calculations 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 4, 页码: art. no. 044305, Art. No. 044305 作者:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. E-mail Address: zgwang@uestc.edu.cn   |  收藏  |  浏览/下载：105/1  |  提交时间：2010/10/11 CHEMICAL-VAPOR-DEPOSITION  Chemical-vapor-deposition  Gan Nanowires  Native Defects  Complexes  Epitaxy  Growth  Arrays  GAN NANOWIRES  NATIVE DEFECTS  COMPLEXES  EPITAXY  GROWTH  ARRAYS   Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s 期刊论文  OAI收割 chemistry of materials, 22 (4): feb 23 2010, CHEMISTRY OF MATERIALS, 22 (4): FEB 23 2010, 2010, 2010, 卷号: 22, 22, 期号: 4, 页码: 1294-1296, 1294-1296 作者:  Wen Q (Wen Qian);  Zhang RF (Zhang Rufan);  Qian WZ (Qian Weizhong);  Wang YR (Wang Yuran);  Tan PH (Tan Pingheng)   |  收藏  |  浏览/下载：128/7  |  提交时间：2010/04/13 CHEMICAL-VAPOR-DEPOSITION  Chemical-vapor-deposition  Walled Carbon Nanotubes  Water  Ultralong  Catalysts  Mechanism  WALLED CARBON NANOTUBES  WATER  ULTRALONG  CATALYSTS  MECHANISM   Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 18, 页码: art.no.182505 作者:  Chen L;  Qian X 收藏  |  浏览/下载：84/39  |  提交时间：2010/03/08 annealing