机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 会议论文 [12]

发表日期

• 2010 [1]
• 2008 [2]
• 2006 [1]
• 2004 [1]
• 2001 [3]
• 2000 [1]
• 更多

学科主题

• 半导体材料 [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS 会议论文  OAI收割 34th ieee photovoltaic specialists conference, philadelphia, pa, 2009 Peng WB (Peng Wenbo); Zeng XB (Zeng Xiangbo); Liu SY (Liu Shiyong); Xiao HB (Xiao Haibo); Kong GL (Kong Guanglin); Yu YD (Yu Yude); Liao XB (Liao Xianbo) 收藏  |  浏览/下载：252/64  |  提交时间：2010/08/16 AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Hou QF;  Zhang ML 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09 ALGAN/GAN HEMTS   Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文  OAI收割 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ 收藏  |  浏览/下载：132/26  |  提交时间：2010/03/29 anodic alumina films   A V-shaped module technique for promoting generation photocurrent density of silicon solar cells 会议论文  OAI收割 5th international conference on thin film physics and applications, shanghai, peoples r china, may 31-jun 02, 2004 Li, JM; Chong, M; Duan, XF; Xu, JD; Gao, M; Wang, FL 收藏  |  浏览/下载：160/34  |  提交时间：2010/03/29 silicon  solar cells  V-shaped structure   High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Zeng YP; Cao X; Cui LJ; Kong MY; Pan L; Wang BQ; Zhu ZP 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 molecular beam epitaxy  high electron mobility transistors  DENSITY   High-quality GaN grown by gas-source MBE 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 characterization  molecular beam epitaxy  gallium compounds  nitrides  piezoelectric materials  semiconducting gallium compounds  MOLECULAR-BEAM EPITAXY  HETEROSTRUCTURES  SAPPHIRE  DIODES   Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 molecular beam epitaxy  MOBILITY   High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers 会议论文  OAI收割 international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999 Chen LH; Xu ZT; Ma XY; Zhang JM; Yang GW; Xu JY 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 high power  Al-free laser  communication  EPITAXY   High quality hydrogenated amorphous silicon films with significantly improved stability 会议论文  OAI收割 symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting, san francisco, ca, apr 14-17, 1998 Sheng SR; Liao XB; Ma ZX; Yue GZ; Wang YQ; Kong GL 收藏  |  浏览/下载：20/0  |  提交时间：2010/10/29 A-SI-H  LIGHT SOAKING  PHOTOCONDUCTIVITY  INCREASE