中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [28]
采集方式
OAI收割 [28]
内容类型
期刊论文 [28]
发表日期
2010 [1]
2008 [1]
2007 [2]
2006 [1]
2005 [1]
2004 [2]
更多
学科主题
半导体材料 [28]
筛选
浏览/检索结果:
共28条,第1-10条
帮助
限定条件
学科主题:半导体材料
内容类型:期刊论文
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
发表日期升序
发表日期降序
One-pot synthesis and self-assembly of colloidal copper(I) sulfide nanocrystals
期刊论文
OAI收割
nanotechnology, 2010, 卷号: 21, 期号: 28, 页码: art. no. 285602
Tang AW (Tang Aiwei)
;
Qu SC (Qu Shengchun)
;
Li K (Li Kai)
;
Hou YB (Hou Yanbing)
;
Teng F (Teng Feng)
;
Cao J (Cao Jie)
;
Wang YS (Wang Yongsheng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:218/43
  |  
提交时间:2010/07/18
BINARY NANOPARTICLE SUPERLATTICES
LIGHT-EMITTING-DIODES
SOLVENTLESS SYNTHESIS
CDSE NANOCRYSTALS
QUANTUM DOTS
MONODISPERSE NANOCRYSTALS
OPTICAL-PROPERTIES
CDTE NANOCRYSTALS
CU2S NANOCRYSTALS
SOLAR-CELLS
Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 12, 页码: 4364-4367
作者:
Wei HY
;
Jiao CM
收藏
  |  
浏览/下载:178/45
  |  
提交时间:2010/03/08
TRANSMISSION ELECTRON-MICROSCOPY
WURTZITE-TYPE CRYSTALS
VAPOR-PHASE EPITAXY
INTRINSIC STRESS
SAPPHIRE SURFACE
THIN-FILMS
GAN
GROWTH
DIFFRACTION
MECHANISM
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate
期刊论文
OAI收割
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793
Wang XL (Wang Xiaoliang)
;
Wang CM (Wang Cuimei)
;
Hu GX (Hu Guoxin)
;
Mao HL (Mao Hongling)
;
Fang CB (Fang Cebao)
;
Wang JX (Wang Junxi)
;
Ran JX (Ran Junxue)
;
Li HP (Li Hanping)
;
Li JM (Li Jinmin)
;
Wang ZG (Wang, Zhanguo)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/03/29
2DEG
Influence of InAs deposition. thickness on the structural and optical properties of InAs quantum wires
期刊论文
OAI收割
journal of university of science and technology beijing, 2007, 卷号: 14, 期号: 4, 页码: 341-344
Wang YL (Wang Yuanli)
;
Cui H (Cui Hua)
;
Lei W (Lei Wen)
;
Su YH (Su Yahong)
;
Chen YH (Chen Yonghai)
;
Wu J (Wu Ju)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2010/03/29
quantum wire
Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures
期刊论文
OAI收割
journal of crystal growth, 2006, 卷号: 292, 期号: 1, 页码: 19-25
Li C (Li Chun)
;
Fang GJ (Fang Guojia)
;
Fu Q (Fu Qiang)
;
Su FH (Su Fuhai)
;
Li GH (Li Guohua)
;
Wu XG (Wu Xiaoguang)
;
Zhao XZ (Zhao Xingzhong)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/04/11
nanostructure
vapor phase transport
ZnO
semiconductor materials
PHYSICAL VAPOR-DEPOSITION
OPTICAL-PROPERTIES
THERMAL EVAPORATION
FIELD-EMISSION
NANOWIRES
NANORODS
MECHANISM
ARRAYS
Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors
期刊论文
OAI收割
半导体学报, 2005, 卷号: 26, 期号: 8, 页码: 1519-1523
作者:
Jin Peng
;
Xu Bo
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/23
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
期刊论文
OAI收割
micron, 2004, 卷号: 35, 期号: 6, 页码: 475-480
Luo, XH
;
Wang, RM
;
Zhang, XP
;
Zhang, HZ
;
Yu, DP
;
Luo, MC
收藏
  |  
浏览/下载:145/32
  |  
提交时间:2010/03/09
transmission electron microscopy
electron energy loss spectroscopy
molecular beam epitaxy
gallium nitride
CHEMICAL-VAPOR-DEPOSITION
EPITAXY
LAYER
Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures
期刊论文
OAI收割
journal of crystal growth, 2004, 卷号: 270, 期号: 3-4, 页码: 364-369
Huang XQ
;
Liu FQ
;
Che XL
;
Liu JQ
;
Lei W
;
Wang ZG
收藏
  |  
浏览/下载:214/29
  |  
提交时间:2010/03/09
nanostructures
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423
Hu GQ
;
Kong X
;
Wan L
;
Wang YQ
;
Duan XF
;
Lu Y
;
Liu XL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/08/12
amorphous layer
dislocation
transmission electron microscopy
metalorganic chemical vapor deposition
GaN
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
HETEROEPITAXIAL GROWTH
ELECTRON-DIFFRACTION
DEFECT STRUCTURE
HETEROSTRUCTURE
DISLOCATIONS
MICROSCOPY
(111)SI
LAYER
Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72
Shen XM
;
Fu Y
;
Feng G
;
Zhang BS
;
Feng ZH
;
Wang YT
;
Yang H
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/08/12
transmission electron microscopy
X-ray diffraction
epitaxial lateral overgrowth
metalorganic vapor phase epitaxy
cubic gallium nitride
CHEMICAL-VAPOR-DEPOSITION
CUBIC GAN
PHASE EPITAXY
REDUCTION
GROWTH