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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [23]
采集方式
OAI收割 [23]
内容类型
期刊论文 [20]
会议论文 [3]
发表日期
2006 [5]
2005 [1]
2004 [2]
2003 [3]
2002 [2]
2001 [3]
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学科主题
半导体材料 [23]
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The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity
期刊论文
OAI收割
applied surface science, 2006, 卷号: 252, 期号: 12, 页码: 4104-4109
Wang XF
;
Zeng YP
;
Wang BQ
;
Zhu ZP
;
Du XQ
;
Li M
;
Chang BK
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/04/11
structure
NEA
integrated photosensitivity
GaAs
Cs : O
SPECTRAL RESPONSE
NEA PHOTOCATHODES
LAYER THICKNESS
CS
SURFACE
PHOTOEMISSION
SYSTEM
Low -temperature preparation of ZnO films on Si substrates by MOCVD
期刊论文
OAI收割
功能材料与器件学报, 2006, 卷号: 12, 期号: 1, 页码: 63-66
作者:
Wang Jun
;
Wang Jun
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2010/11/23
Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures
期刊论文
OAI收割
journal of crystal growth, 2006, 卷号: 292, 期号: 1, 页码: 19-25
Li C (Li Chun)
;
Fang GJ (Fang Guojia)
;
Fu Q (Fu Qiang)
;
Su FH (Su Fuhai)
;
Li GH (Li Guohua)
;
Wu XG (Wu Xiaoguang)
;
Zhao XZ (Zhao Xingzhong)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/04/11
nanostructure
vapor phase transport
ZnO
semiconductor materials
PHYSICAL VAPOR-DEPOSITION
OPTICAL-PROPERTIES
THERMAL EVAPORATION
FIELD-EMISSION
NANOWIRES
NANORODS
MECHANISM
ARRAYS
ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target
期刊论文
OAI收割
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845
Zhao J (Zhao Jie)
;
Hu LZ (Hu Lizhong)
;
Wang ZY (Wang Zhaoyang)
;
Sun J (Sun Jie)
;
Wang ZJ (Wang Zhijun)
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/04/11
ZnO
pulsed laser deposition
oxygen pressure
annealing
X-ray diffraction
photoluminescence
ULTRAVIOLET EMISSION
ROOM-TEMPERATURE
ZINC-OXIDE
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
期刊论文
OAI收割
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427
Shi LW (Shi Liwei)
;
Wang Q (Wang Qiang)
;
Li YG (Li Yuguo)
;
Xue CS (Xue Chengshan)
;
Zhuang HZ (Zhuang Huizhao)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/04/11
ion implantation
annealing
chemical etching
photoluminescence
POROUS SILICON
LUMINESCENCE
Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
期刊论文
OAI收割
journal of crystal growth, 2005, 卷号: 284, 期号: 1-2, 页码: 20-27
作者:
Ye XL
;
Xu B
收藏
  |  
浏览/下载:67/18
  |  
提交时间:2010/03/17
annealing
Influence of Mg content on molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors
期刊论文
OAI收割
journal of crystal growth, 2004, 卷号: 265, 期号: 1-2, 页码: 28-33
Lu, LW
;
Sou, IK
;
Ge, WK
收藏
  |  
浏览/下载:326/94
  |  
提交时间:2010/03/09
characterization
Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma
期刊论文
OAI收割
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12
Hu ZH
;
Liao XB
;
Diao HW
;
Kong GL
;
Zeng XB
;
Xu YY
收藏
  |  
浏览/下载:32/3
  |  
提交时间:2010/03/09
annealing
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY
;
Zhao YW
;
Zeng YP
;
Duan ML
;
Sun WR
;
Jiao JH
;
Lin LY
收藏
  |  
浏览/下载:351/16
  |  
提交时间:2010/08/12
annealing
defects
etching
semiconducting indium phosphide
FE-DOPED INP
SEMIINSULATING INP
INDIUM-PHOSPHIDE
DEFECTS
DIFFUSION
CRYSTALS
WAFERS
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
OAI收割
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
neutron irradiation
annealing
defects in silicon
SPECTRA