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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [25]
采集方式
OAI收割 [25]
内容类型
会议论文 [25]
发表日期
2010 [1]
2009 [1]
2008 [3]
2007 [1]
2006 [3]
2004 [3]
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学科主题
半导体材料 [19]
半导体物理 [3]
光电子学 [2]
微电子学 [1]
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内容类型:会议论文
专题:半导体研究所
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STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS
会议论文
OAI收割
34th ieee photovoltaic specialists conference, philadelphia, pa, 2009
Peng WB (Peng Wenbo)
;
Zeng XB (Zeng Xiangbo)
;
Liu SY (Liu Shiyong)
;
Xiao HB (Xiao Haibo)
;
Kong GL (Kong Guanglin)
;
Yu YD (Yu Yude)
;
Liao XB (Liao Xianbo)
收藏
  |  
浏览/下载:252/64
  |  
提交时间:2010/08/16
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
OAI收割
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS
;
Zhao, YM
;
Wang, L
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/03/09
in-situ doping
boron
aluminum
memory effects
hot-wall LPCVD
4H-SiC
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
OAI收割
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
GAS SENSORS
HEMT STRUCTURES
MOBILITY
TEMPERATURE
TRANSISTORS
GROWTH
MOCVD
LAYER
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
OAI收割
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
PERFORMANCE
HETEROSTRUCTURES
OPTIMIZATION
MOBILITY
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD
会议论文
OAI收割
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:
Hou QF
;
Zhang ML
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/03/09
ALGAN/GAN HEMTS
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications
会议论文
OAI收割
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Sun, G (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Liu, X (Liu, Xingfang)
;
Zhao, Y (Zhao, Yongmei)
;
Li, J (Li, Jiaye)
;
Wang, L (Wang, Lei)
;
Zhao, W (Zhao, Wanshun)
;
Wang, L (Wang, Liang)
收藏
  |  
浏览/下载:87/29
  |  
提交时间:2010/03/29
polycrystalline 3C-SiC
resonator
doping
SILICON-CARBIDE
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
会议论文
OAI收割
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, CM
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Li, JP
收藏
  |  
浏览/下载:119/30
  |  
提交时间:2010/03/29
HIGH BREAKDOWN VOLTAGE
MOBILITY TRANSISTORS
HETEROSTRUCTURES
SAPPHIRE
GANHEMTS
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD
会议论文
OAI收割
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, XL
;
Wang, CM
;
Hu, GX
;
Wang, JX
;
Li, JP
收藏
  |  
浏览/下载:154/51
  |  
提交时间:2010/03/29
MOLECULAR-BEAM EPITAXY
2-DIMENSIONAL ELECTRON-GAS
BULK GAN
OPTIMIZATION
LAYERS
HEMTS
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures
会议论文
OAI收割
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
作者:
Ye XL
;
Jin P
;
Xu B
收藏
  |  
浏览/下载:119/42
  |  
提交时间:2010/03/29
lateral intersubband photocurrent
Improved diphasic nc-si/a-si : H I-layer materials using PECVD
会议论文
OAI收割
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Hao, HY
;
Zhang, SB
;
Xu, YY
;
Zeng, XB
;
Diao, HW
;
Kong, GL
;
Liao, XB
收藏
  |  
浏览/下载:214/78
  |  
提交时间:2010/03/29
OPEN-CIRCUIT VOLTAGE
SILICON SOLAR-CELLS
AMORPHOUS-SILICON
ABSORPTION