机构

• 半导体研究所 [23]

采集方式

• OAI收割 [23]

内容类型

• 会议论文 [23]

发表日期

• 2010 [1]
• 2006 [3]
• 2005 [2]
• 2003 [4]
• 2002 [4]
• 2001 [3]
• 更多

学科主题

• 半导体物理 [11]
• 光电子学 [6]
• 半导体材料 [6]

筛选

浏览/检索结果: 共23条，第1-10条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As 会议论文  OAI收割 international magnetics conference (intermag), madrid, spain, may 04-08, 2008 作者:  Gan HD 收藏  |  浏览/下载：65/0  |  提交时间：2010/03/09 Magnetic analysis   Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Zeng, YX (Zeng, Yuxin); Liu, W (Liu, Wei); Yang, FH (Yang, Fuhua); Xu, P (Xu, Ping); Tan, PH (Tan, Pingheng); Zheng, HZ (Zheng, Houzhi); Zeng, YP (Zeng, Yiping); Xing, YJ (Xing, Yingjie); Yu, DP (Yu, Dapeng) 收藏  |  浏览/下载：98/31  |  提交时间：2010/03/29 InAs quantum dot  photoluminescence  modulation-doped  field effect transistor  MU-M  CAPPING LAYER   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文  OAI收割 3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：166/29  |  提交时间：2010/03/29 time-resolved photoluminescence   Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文  OAI收割 conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006 Sun, Z (Sun, Z.); Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.) 收藏  |  浏览/下载：182/36  |  提交时间：2010/03/29 GaInNAs/GaAs quantum wells  optical properties  nonradiative recombination effect  time-resolved photoluminescence  PL decay dynamics  PL thermal quenching  MOLECULAR-BEAM EPITAXY  GAASN ALLOYS  EXCITATION   Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V 会议论文  OAI收割 conference on optoelectronic materials and devices for optical communications, shanghai, peoples r china, nov 07-10, 2005 Zhang, SJ; Wen, JM; Song, HP; Zhu, NH 收藏  |  浏览/下载：85/26  |  提交时间：2010/03/29 semiconductor laser diode  subtraction method  scattering parameters  intrinsic response  thermal effect  FREQUENCY-RESPONSE   Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F 会议论文  OAI收割 conference on optoelectronic materials and devices for optical communications, shanghai, peoples r china, nov 07-10, 2005 Xu Y; Li YZ; Song GF; Gan QQ; Cao Q; Guo L; Chen LH 收藏  |  浏览/下载：108/26  |  提交时间：2010/03/29 AIGaInP laser diodes   Lasing of CdSSe quantum dots in glass spherical microcavity 会议论文  OAI收割 international conference on superlattices nano-structures and nano-devices (icsnn-02), toulouse, france, jul 22-26, 2002 作者:  Jiang DS 收藏  |  浏览/下载：19/0  |  提交时间：2010/11/15 Growth and photoluminescence of InAlGaN films 会议论文  OAI收割 5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003 作者:  Li DB 收藏  |  浏览/下载：13/2  |  提交时间：2010/10/29 MULTIPLE-QUANTUM WELLS  QUATERNARY ALLOYS  OPTICAL-PROPERTIES   Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 会议论文  OAI收割 10th international conference on high pressures in semiconductor physics (hpsp-x), guildford, england, aug 05-08, 2002 Li Q; Fang ZL; Xu SJ; Li GH; Xie MH; Tong SY; Zhang XH; Liu W; Chua SJ 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 PIEZOELECTRIC FIELD  PHOTOLUMINESCENCE  TEMPERATURE   Optical study of localized and delocalized states in GaAsN/GaAs 会议论文  OAI收割 symposium on gan and related alloys held at the mrs fall meeting, boston, ma, dec 01-05, 2003 作者:  Tan PH 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  ALLOYS  GAAS1-XNX  PHOTOLUMINESCENCE  RELAXATION