中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体研究所 [9]
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  • 2017 [9]
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浏览/检索结果: 共9条，第1-9条 帮助

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Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文  OAI收割
IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108
作者:  Jing Yang;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu
  |  收藏  |  浏览/下载：29/0  |  提交时间：2018/11/30
Tuning crystal polymorphs of a π-extended tetrathiafulvalene-based cruciform molecule towards high-performance organic field-effect transistors 期刊论文  OAI收割
SCIENCE CHINA Materials - LETTERS, 2017, 卷号: 60, 期号: 1, 页码: 75–82
作者:  Linlin Feng;  Huanli Dong;  Qingyuan Li;  Weigang Zhu;  Gege Qiu
收藏  |  浏览/下载：33/0  |  提交时间：2018/06/15
Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文  OAI收割
Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320
作者:  Yao Xing;  De Gang Zhao;  De Sheng Jiang;  Xiang Li;  Feng Liang
收藏  |  浏览/下载：39/0  |  提交时间：2018/07/11
Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination 期刊论文  OAI收割
Journal of Alloys and Compounds, 2017, 卷号: 725, 期号: 2017, 页码: 1130-1135
作者:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi
收藏  |  浏览/下载：30/0  |  提交时间：2018/07/11
Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells 期刊论文  OAI收割
IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 卷号: 7, 期号: 4, 页码: 1017-1023
作者:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi
收藏  |  浏览/下载：27/0  |  提交时间：2018/07/11
Suppression of optical field leakage to GaN substrate in GaN-based green laser diode 期刊论文  OAI收割
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 484-489
作者:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu
收藏  |  浏览/下载：33/0  |  提交时间：2018/07/11
New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode 期刊论文  OAI收割
Optics and Laser Technology, 2017, 卷号: 97, 页码: 284–289
作者:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu
收藏  |  浏览/下载：17/0  |  提交时间：2018/07/11
Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact 期刊论文  OAI收割
Applied Optics, 2017, 卷号: 56, 期号: 14, 页码: 4197-4200
作者:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu
收藏  |  浏览/下载：17/0  |  提交时间：2018/07/11
Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer 期刊论文  OAI收割
Journal of Crystal Growth, 2017, 卷号: 467, 页码: 1-5
作者:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu
收藏  |  浏览/下载：30/0  |  提交时间：2018/07/11