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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [15]
采集方式
OAI收割 [15]
内容类型
期刊论文 [15]
发表日期
2017 [1]
2014 [1]
2011 [1]
2010 [2]
2007 [3]
2006 [4]
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学科主题
半导体材料 [15]
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学科主题:半导体材料
内容类型:期刊论文
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Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B=MgO Injectors with Different MgO Growth Processes
期刊论文
OAI收割
PHYSICAL REVIEW APPLIED, 2017, 卷号: 8, 页码: 054027
作者:
P. Barate
;
S. H. Liang
;
T. T. Zhang
;
J. Frougier
;
B. Xu
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2018/05/30
Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
期刊论文
OAI收割
applied physics letters, 2014, 卷号: 105, 期号: 1, 页码: 012404
Barate, P
;
Liang, S
;
Zhang, TT
;
Frougier, J
;
Vidal, M
;
Renucci, P
;
Devaux, X
;
Xu, B
;
Jaffres, H
;
George, JM
;
Marie, X
;
Hehn, M
;
Mangin, S
;
Zheng, Y
;
Amand, T
;
Tao, B
;
Han, XF
;
Wang, Z
;
Lu, Y
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2015/03/25
Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
期刊论文
OAI收割
ieee international conference on group iv photonics gfp, IEEE International Conference on Group IV Photonics GFP, 2011, 2011, 卷号: 32, 32, 期号: 11, 页码: 114007, 114007
作者:
Li, Zhicong
;
Li, Panpan
;
Wang, Bing
;
Li, Hongjian
;
Liang, Meng
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Diodes
Electrostatic devices
Electrostatic discharge
Gallium alloys
Gallium nitride
Light emission
Diodes
Electrostatic Devices
Electrostatic Discharge
Gallium Alloys
Gallium Nitride
Light Emission
The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.)
;
Chen YH (Chen Y. H.)
;
Tang CG (Tang C. G.)
;
Liang LY (Liang L. Y.)
;
Jin P (Jin P.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/12/05
QUANTUM-DOT SYSTEM
ISLAND FORMATION
IN-SITU
EVOLUTION
GAAS
PHOTOLUMINESCENCE
Structure and properties of InAs/AlAs quantum dots for broadband emission
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 10, 页码: art. no. 103515
Meng XQ (Meng X. Q.)
;
Jin P (Jin P.)
;
Liang ZM (Liang Z. M.)
;
Liu FQ (Liu F. Q.)
;
Wang ZG (Wang Z. G.)
;
Zhang ZY (Zhang Z. Y.)
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/12/28
CHEMICAL-VAPOR-DEPOSITION
The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates
期刊论文
OAI收割
chinese physics, 2007, 卷号: 16, 期号: 5, 页码: 1467-1471
Liu Z (Liu Zhe)
;
Wang XL (Wang Xiao-Liang)
;
Wang JX (Wang Jun-Xi)
;
Hu GX (Hu Guo-Xin)
;
Guo LC (Guo Lun-Chun)
;
Li JM (Li Jin-Min)
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/03/29
GaN
Rapid thermal annealing properties of ZnO films grown using methanol as oxidant
期刊论文
OAI收割
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013
Zhang PF (Zhang, P. F.)
;
Liu XL (Liu, X. L.)
;
Wei HY (Wei, H. Y.)
;
Fan HB (Fan, H. B.)
;
Liang ZM (Liang, Z. M.)
;
Jin P (Jin, P.)
;
Yang SY (Yang, S. Y.)
;
Jiao CM (Jiao, C. M.)
;
Zhu QS (Zhu, Q. S.)
;
Wang ZG (Wang, Z. G.)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Stability of GaAs photocathodes under different intensities of illumination
期刊论文
OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 10, 页码: 6109-6113
Zou JJ (Zou Ji-Jun)
;
Chang BK (Chang Ben-Kang)
;
Yang Z (Yang Zhi)
;
Gao P (Gao Pin)
;
Qiao JL (Qiao Jian-Liang)
;
Zeng YP (Zeng Yi-Pine)
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/03/29
GaAs photocathode
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition
期刊论文
OAI收割
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B
;
Shen H
;
Liang ZC
;
Chen Z
;
Kong GL
;
Liao XB
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/04/11
chemical vapour deposition
electrical properties and measurements
scanning electron microscopy
polycrystalline silicon
GRAIN-BOUNDARIES
STATES
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Jiao YH (Jiao Y. H.)
;
Wu J (Wu J.)
;
Xu B (Xu B.)
;
Jin P (Jin P.)
;
Hu LJ (Hu L. J.)
;
Liang LY (Liang L. Y.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/04/11
metamorphic
long wavelength
quantum dots
molecular beam epitaxy
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
1.3 MU-M
GAAS
EMISSION
RANGE
ISLANDS
ARRAYS
LASERS