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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
新疆理化技术研究所 [32]
近代物理研究所 [6]
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Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices
期刊论文
OAI收割
FRONTIERS IN MATERIALS, 2022, 卷号: 9
作者:
Lu, Guangbao
;
Liu, Jun
;
Zheng, Qirong
;
Li, Yonggang
  |  
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2022/12/23
total ionizing dose effect
dynamic modeling
doubly-hydrogenated oxygen vacancy
microscopic mechanism
MOS devices
Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter
期刊论文
OAI收割
NUCLEAR SCIENCE AND TECHNIQUES, 2022, 卷号: 33, 期号: 3, 页码: 1-9
作者:
Wu, P (Wu, Ping) [1] , [2]
;
Wen, L (Wen, Lin) [3] , [4]
;
Xu, ZQ (Xu, Zhi-Qian) [1] , [2]
;
Jiang, YS (Jiang, Yun-Sheng) [1] , [2]
;
Guo, Q (Guo, Qi) [3] , [4]
  |  
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2022/04/07
Integrated circuit
Totalionizingdose
Electromagneticradiation
Synergistic effect
Combined environment
1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:
Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qiwen) [1] , [2]
;
Lu, W (Lu, Wu) [1] , [2]
;
Cui, JW (Cui, Jiangwei) [1] , [2]
;
Li, YD (Li, Yudong) [1] , [2]
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2022/04/07
Total ionizing dose irradiation
UTBB FD-SOI
1
f noise
Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
期刊论文
OAI收割
SOLID-STATE ELECTRONICS, 2021, 卷号: 175, 期号: 1, 页码: 1-7
作者:
Yang, GG (Yang, Guangan)[ 1 ]
;
Wu, WR (Wu, Wangran)[ 1 ]
;
Zhang, XY (Zhang, Xingyao)[ 2 ]
;
Tang, PY (Tang, Pengyu)[ 1 ]
;
Yang, J (Yang, Jing)[ 1 ]
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2021/03/15
SOI-LIGBT
Total-ionizing-dose
Radiation
Degradation
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
OAI收割
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
模拟数字转换器AD574总剂量和单粒子翻转的协合效应
期刊论文
OAI收割
辐射研究与辐射工艺学报, 2021, 卷号: 39, 期号: 4, 页码: 93-98
作者:
相传峰1,2,3
;
姚帅2,3,4
;
于新2,3
;
李小龙2,3
;
陆妩1,2,3
  |  
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2021/09/07
模拟数字转换器
总剂量效应
单粒子翻转
协合效应
Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal
期刊论文
OAI收割
RADIATION PHYSICS AND CHEMISTRY, 2021, 卷号: 189, 期号: 12, 页码: 1-5
作者:
Li, YD (Li, Yudong)
;
Liu, BK (Liu, Bingkai)
;
Wen, L (Wen, Lin)
;
Wei, Y (Wei, Ying)
;
Zhou, D (Zhou, Dong)
  |  
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2021/10/14
Radiation effectsTotal ionizing dose (TID)Charge coupled device (CCD)Dark signalOxide trapped charges
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
;
He, CF (He, Chengfa) 1
;
Guo, Q (Guo, Qi) 1
  |  
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2021/12/06
Threshold voltage
TestingMOSFET circuits
Transistors
Standards
Logic gates
Fluctuations
Buried oxide (BOX)
silicon-on-insulator (SOI)
total ionizing dose (TID)
TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 8, 页码: 1565-1570
作者:
Ren, ZX (Ren, Zhexuan)
;
1An, X (An, Xia) 1
;
Li, GS (Li, Gensong) 1
;
Liu, JY (Liu, Jingyi) 1
;
Xun, MZ (Xun, Mingzhu) 2
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/09/22
65 nmhot-carrier injection (HCI)layout-dependent effect (LDE)nMOSstressthreshold voltagetotal ionizing dose (TID)