机构

• 半导体研究所 [16]
• 苏州纳米技术与纳米仿... [7]
• 大连化学物理研究所 [1]

采集方式

• OAI收割 [24]

内容类型

• 期刊论文 [24]

发表日期

• 2018 [18]
• 2017 [1]
• 2016 [3]
• 2015 [1]
• 2010 [1]

学科主题

• 光电子学 [5]

筛选

浏览/检索结果: 共24条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 <= x <= 0.104) 期刊论文  OAI收割 SUPERLATTICES AND MICROSTRUCTURES, 2018 作者:  Liu, Wei;  Liang, Feng;  Yang, Ying;  Zhao, Degang;  Jiang, Desheng   |  收藏  |  浏览/下载：43/0  |  提交时间：2019/03/27 Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells 期刊论文  OAI收割 OPTICS EXPRESS, 2018 作者:  Liu, Zongshun;  Peng, Liyuan;  Zhao, Degang;  Jiang, Desheng;  Zhu, Jianjun   |  收藏  |  浏览/下载：51/0  |  提交时间：2019/03/27 Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2018 作者:  Liu, Zongshun;  Liang, Feng;  Liu, Shuangtao;  Zhu, Jianjun;  Jiang, Desheng   |  收藏  |  浏览/下载：44/0  |  提交时间：2019/03/27 Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN 期刊论文  OAI收割 NANOMATERIALS, 2018 作者:  Du, Guotong;  Li, Mo;  Zhang, Yuantao;  Liang, Feng;  Zhao, Degang   |  收藏  |  浏览/下载：29/0  |  提交时间：2019/03/27 The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells 期刊论文  OAI收割 SUPERLATTICES AND MICROSTRUCTURES, 2018 作者:  Zhao, Degang;  Xing, Yao;  Liu, Wei;  Li, Mo;  Wang, Wenjie   |  收藏  |  浏览/下载：40/0  |  提交时间：2019/03/27 Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells 期刊论文  OAI收割 OPTICS EXPRESS, 2018 作者:  Zhao, Degang;  Jiang, Desheng;  Shi, Dongping;  Zhu, Jianjun;  Liu, Zongshun   |  收藏  |  浏览/下载：40/0  |  提交时间：2019/03/27 Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2018 作者:  Du, Guotong;  Zhang, Yuantao;  Liang, Feng;  Zhao, Degang;  Jiang, Desheng   |  收藏  |  浏览/下载：37/0  |  提交时间：2019/03/27 Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer 期刊论文  OAI收割 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 11, 页码: 9321-9325 作者:  Gaoqiang Deng;  Yuantao Zhang;  Ye Yu;  Long Yan;  Pengchong Li;  Xu Han;  Liang Chen;  Degang Zhao;  Guotong Du   |  收藏  |  浏览/下载：16/0  |  提交时间：2019/11/19 Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate 期刊论文  OAI收割 Superlattices and Microstructures, 2018, 卷号: 116, 页码: 1-8 作者:  Gaoqiang Deng ;   Yuantao Zhang ;   Ye Yu ;   Long Yan ;   Pengchong Li ;   Xu Han ;   Liang Chen ;   Degang Zhao ;   Guotong Du   |  收藏  |  浏览/下载：27/0  |  提交时间：2019/11/19 Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer 期刊论文  OAI收割 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 74-79 作者:  Gaoqiang Deng ;   Yuantao Zhang ;   Ye Yu ;   Zhen Huang ;   Xu Han ;   Liang Chen ;   Long Yan ;   Pengchong Li ;   Xin Dong ;   Degang Zhao ;   Guotong Du   |  收藏  |  浏览/下载：17/0  |  提交时间：2019/11/19