机构

• 半导体研究所 [23]

采集方式

• OAI收割 [21]
• iSwitch采集 [2]

内容类型

• 期刊论文 [23]

发表日期

• 2021 [1]
• 2019 [2]
• 2017 [2]
• 2016 [1]
• 2015 [5]
• 2013 [3]
• 更多

学科主题

• 半导体材料 [16]
• 光电子学 [2]

筛选

浏览/检索结果: 共23条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Principles, Measurements and Suppressions of Semiconductor Laser Noise-A Review 期刊论文  OAI收割 IEEE JOURNAL OF QUANTUM ELECTRONICS, 2021, 卷号: 57, 期号: 5, 页码: 2000415 作者:  Peng, Jiwang;   Yu, Haiyang;   Liu, Jianguo;   Cao, Yulian;   Zhang, Zhike;   Sun, Liangchen   |  收藏  |  浏览/下载：181/0  |  提交时间：2022/03/24 Short/Mid-Wave Two-Band Type-II Superlattice Infrared Heterojunction Phototransistor 期刊论文  OAI收割 IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 卷号: 31, 期号: 2, 页码: 137-140 作者:  Wenjun Huang;   Jianliang Huang;   Yanhua Zhang;   Chengcheng Zhao;   Biying Nie;   Yulian Cao ;   Wenquan Ma   |  收藏  |  浏览/下载：16/0  |  提交时间：2020/07/31 InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure 期刊论文  OAI收割 Applied Physics Letters, 2019, 卷号: 114, 页码: 053509 作者:  Biying Nie;   Jianliang Huang;   Chengcheng Zhao;   Wenjun Huang;   Yanhua Zhang;   Yulian Cao;   Wenquan Ma   |  收藏  |  浏览/下载：19/0  |  提交时间：2020/07/30 Electron mobility of inverted InAs/GaSb quantum well structure 期刊论文  OAI收割 Solid State Communications, 2017, 卷号: 267, 页码: 29-32 作者:  Wenjun Huang 收藏  |  浏览/下载：30/0  |  提交时间：2018/05/23 Two-Color niBin Type II Superlattice Infrared Photodetector With External Quantum Efficiency Larger Than 100% 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 页码: 1266-1269 作者:  Jianliang Huang;  Wenquan Ma;  Yanhua Zhang;  Yulian Cao;  Wenjun Huang 收藏  |  浏览/下载：24/0  |  提交时间：2018/05/23 Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers 期刊论文  OAI收割 IEEE Electron Device Letters, 2016, 卷号: 37, 期号: 9, 页码: 1166 - 1169 Yanhua Zhang; Wenquan Ma; Jianliang Huang; Yulian Cao; Ke Liu; Wenjun Huang; Chengcheng Zhao; Haiming Ji; Tao Yang 收藏  |  浏览/下载：30/0  |  提交时间：2017/03/10 Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate 期刊论文  OAI收割 Applied Physics Letters, 2015, 卷号: 107, 期号: 4, 页码: 041103 Ke Liu; Wenquan Ma; Jianliang Huang; Yanhua Zhang; Yulian Cao; Wenjun Huang; Shuai Luo; Tao Yang 收藏  |  浏览/下载：35/0  |  提交时间：2016/03/23 Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal 期刊论文  OAI收割 solid state communications, 2015, 卷号: 224, 页码: 34-36 Jianliang Huang; Wenquan Ma; Yanhua Zhang; Yulian Cao; Ke Liu; Wenjun Huang; Shuai Luo; Haiming Ji; Tao Yang 收藏  |  浏览/下载：34/0  |  提交时间：2016/03/23 Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector 期刊论文  OAI收割 applied physics letters, 2015, 卷号: 106, 期号: 26, 页码: 1-5 Jianliang Huang; Wenquan Ma; Yanhua Zhang; Yulian Cao; Ke Liu; Wenjun Huang; Shulong Lu 收藏  |  浏览/下载：32/0  |  提交时间：2016/03/23 Narrow-band Type II Superlattice Photodetector with Detection Wavelength Shorter than 2 um 期刊论文  OAI收割 ieee photonics technology letters, 2015, 卷号: 27, 期号: 21, 页码: 2276-2279 Jianliang Huang; Wenquan Ma; Yanhua Zhang; Yulian Cao; Ke Liu; Wenjun Huang; Shulong Lu 收藏  |  浏览/下载：21/0  |  提交时间：2016/03/23