机构

• 半导体研究所 [5]
• 宁波材料技术与工程研... [1]

采集方式

• OAI收割 [5]
• iSwitch采集 [1]

内容类型

• 期刊论文 [5]
• 会议论文 [1]

发表日期

• 2021 [2]
• 2013 [1]
• 2006 [3]

学科主题

• 光电子学 [2]
• 半导体材料 [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth 期刊论文  OAI收割 CRYSTAL GROWTH & DESIGN, 2021, 卷号: 21, 期号: 5, 页码: 2911-2919 作者:  Chen, Li;  Lin, Wei;  Chen, Hangyang;  Xu, Houqiang;  Guo, Chenyu   |  收藏  |  浏览/下载：33/0  |  提交时间：2021/12/01 SAPPHIRE  GROWTH  SUPERLATTICES  QUALITY  ALGAN  AIN   Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth 期刊论文  OAI收割 CRYSTAL GROWTH & DESIGN, 2021, 卷号: 21, 期号: 5, 页码: 2911-2919 作者:  Chen, Li;   Lin, Wei;   Chen, Hangyang;   Xu, Houqiang;   Guo, Chenyu;   Liu, Zhibin;   Yan, Jianchang;   Sun, Jie;   Liu, Huan;   Wu, Jason;   Guo, Wei;   Kang, Junyong;   Ye, Jichun   |  收藏  |  浏览/下载：20/0  |  提交时间：2022/07/26 Vacuum Rabi Splitting of Exciton–Polariton Emission in an AlN Film 期刊论文  OAI收割 Scientific Reports, 2013, 卷号: 3, 页码: 3551 Kongyi Li , Weiying Wang , Zhanghai Chen , Na Gao , Weihuang Yang , Wei Li , Hangyang Chen ,Shuping Li , Heng Li , Peng Jin & Junyong Kang 收藏  |  浏览/下载：22/0  |  提交时间：2014/03/18 Defect influence on luminescence efficiency of gan-based leds 期刊论文  iSwitch采集 Materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 371-374 作者:  Li, Shuping;  Fang, Zhilai;  Chen, Hangyang;  Li, Jinchai;  Chen, Xiaohong 收藏  |  浏览/下载：33/0  |  提交时间：2019/05/12 Defects  Gan  Luminescence efficiency  Led   Defect influence on luminescence efficiency of GaN-based LEDs 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 371-374 Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong) 收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11 defects  GaN  luminescence efficiency  LED   Defect influence on luminescence efficiency of GaN-based LEDs 会议论文  OAI收割 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong) 收藏  |  浏览/下载：484/18  |  提交时间：2010/03/29 defects