中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共6条,第1-6条 帮助

条数/页: 排序方式:
n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE 期刊论文  OAI收割
APPLIED SURFACE SCIENCE, 2016, 卷号: 389, 页码: 199-204
作者:  
Wang, Minhuan;  Bian, Jiming;  Sun, Hongjun;  Liu, Weifeng;  Zhang, Yuzhi
收藏  |  浏览/下载:34/0  |  提交时间:2017/02/24
Electroluminescence from perovskite LEDs with the structure of Ag/Spiro-OMeTAD/CH3NH3PbI3/TiO2/FTO 期刊论文  OAI收割
CHEMICAL PHYSICS LETTERS, 2016, 卷号: 662, 页码: 176-181
作者:  
Wang, Minhuan;  Shi, Yantao;  Bian, Jiming;  Dong, Qingshun;  Sun, Hongjun
收藏  |  浏览/下载:31/0  |  提交时间:2017/02/24
Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film 期刊论文  OAI收割
JOURNAL OF MATERIALS SCIENCE, 2016, 卷号: 51, 期号: 17, 页码: 8233-8239
作者:  
Wang, Minhuan;  Bian, Jiming;  Sun, Hongjun;  Liu, Hongzhu;  Li, Xiaoxuan
收藏  |  浏览/下载:38/0  |  提交时间:2017/02/27
Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure 期刊论文  OAI收割
MATERIALS RESEARCH BULLETIN, 2016, 卷号: 77, 页码: 199-204
作者:  
Li, Xiaoxuan;  Bian, Jiming;  Wang, Minhuan;  Miao, Lihua;  Liu, Hongzhu
收藏  |  浏览/下载:54/0  |  提交时间:2017/02/27
Growth and characterization of VO2/p-GaN/sapphire heterostructure with phase transition properties 期刊论文  OAI收割
APPLIED SURFACE SCIENCE, 2015, 卷号: 357, 页码: 282-286
作者:  
Bian, Jiming;  Wang, Minhuan;  Miao, Lihua;  Li, Xiaoxuan;  Luo, Yingmin
收藏  |  浏览/下载:32/0  |  提交时间:2017/03/01
Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD 期刊论文  OAI收割
RARE METALS, 2012, 卷号: 31, 期号: 2, 页码: 150-153
作者:  
Qin Fuwen;  Zhang Dong;  Bai Yizhen;  Ju Zhenhe;  Li Shuangmei
  |  收藏  |  浏览/下载:23/0  |  提交时间:2021/02/02