中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
上海硅酸盐研究所 [5]
金属研究所 [1]
采集方式
OAI收割 [6]
内容类型
期刊论文 [6]
发表日期
2016 [4]
2015 [1]
2012 [1]
学科主题
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n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE
期刊论文
OAI收割
APPLIED SURFACE SCIENCE, 2016, 卷号: 389, 页码: 199-204
作者:
Wang, Minhuan
;
Bian, Jiming
;
Sun, Hongjun
;
Liu, Weifeng
;
Zhang, Yuzhi
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2017/02/24
Vanadium oxide
p-GaN
Molecular beam epitaxy
Phase transition
Electroluminescence from perovskite LEDs with the structure of Ag/Spiro-OMeTAD/CH3NH3PbI3/TiO2/FTO
期刊论文
OAI收割
CHEMICAL PHYSICS LETTERS, 2016, 卷号: 662, 页码: 176-181
作者:
Wang, Minhuan
;
Shi, Yantao
;
Bian, Jiming
;
Dong, Qingshun
;
Sun, Hongjun
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2017/02/24
Perovskite
Electroluminescence
Two-step spin-coating
Near-infrared
Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film
期刊论文
OAI收割
JOURNAL OF MATERIALS SCIENCE, 2016, 卷号: 51, 期号: 17, 页码: 8233-8239
作者:
Wang, Minhuan
;
Bian, Jiming
;
Sun, Hongjun
;
Liu, Hongzhu
;
Li, Xiaoxuan
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2017/02/27
Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure
期刊论文
OAI收割
MATERIALS RESEARCH BULLETIN, 2016, 卷号: 77, 页码: 199-204
作者:
Li, Xiaoxuan
;
Bian, Jiming
;
Wang, Minhuan
;
Miao, Lihua
;
Liu, Hongzhu
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2017/02/27
Nitrides
Oxide
Thin films
Sputtering
Electrical properties
Growth and characterization of VO2/p-GaN/sapphire heterostructure with phase transition properties
期刊论文
OAI收割
APPLIED SURFACE SCIENCE, 2015, 卷号: 357, 页码: 282-286
作者:
Bian, Jiming
;
Wang, Minhuan
;
Miao, Lihua
;
Li, Xiaoxuan
;
Luo, Yingmin
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2017/03/01
Vanadium oxide
p-GaN
Pulsed laser deposition
Phase transition
Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD
期刊论文
OAI收割
RARE METALS, 2012, 卷号: 31, 期号: 2, 页码: 150-153
作者:
Qin Fuwen
;
Zhang Dong
;
Bai Yizhen
;
Ju Zhenhe
;
Li Shuangmei
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2021/02/02
MOLECULAR-BEAM EPITAXY
GROWTH
InN films
ECR-PEMOCVD
sapphire substrates
semiconductor devices