中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共47条,第1-10条 帮助

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Theoretical insight into the degradation of p-nitrophenol by OH radicals synergized with other active oxidants in aqueous solution 期刊论文  OAI收割
JOURNAL OF HAZARDOUS MATERIALS, 2020, 卷号: 389, 页码: -
作者:  
Mei, Q;  Cao, HJ;  Han, DD;  Li, MY;  Yao, SD
  |  收藏  |  浏览/下载:23/0  |  提交时间:2021/09/06
Characteristics and sources of halogenated hydrocarbons in the Yellow River Delta region, northern China 期刊论文  OAI收割
ATMOSPHERIC RESEARCH, 2019, 卷号: 225, 页码: 70-80
作者:  
Zheng, PG;  Chen, TS;  Dong, C;  Liu, YH;  Li, HY
  |  收藏  |  浏览/下载:33/0  |  提交时间:2020/07/08
Calibration and Calculation of Polarization Lidar 期刊论文  OAI收割
EARTH AND SPACE SCIENCE, 2019, 卷号: 6, 期号: 7, 页码: 1161-1170
作者:  
Xian, JH
  |  收藏  |  浏览/下载:23/0  |  提交时间:2020/07/08
DUST  CLOUDS  
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment 会议论文  OAI收割
作者:  
Li BH(李彬鸿);  Huang Y(黄杨);  J.Wu;  Huang YB(黄云波);  Li B(李博)
  |  收藏  |  浏览/下载:44/0  |  提交时间:2019/05/13
Process variation dependence of total ionizing dose effects in bulk nFinFETs 会议论文  OAI收割
作者:  
Li B(李博);  Huang YB(黄云波);  L.Yang;  Zhang QZ(张青竹);  Zheng ZS(郑中山)
  |  收藏  |  浏览/下载:51/0  |  提交时间:2019/05/13
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment 期刊论文  OAI收割
Microelectronics Reliability, 2018
作者:  
Zhang QZ(张青竹);  Yin HX(殷华湘);  Han ZS(韩郑生);  Luo JJ(罗家俊);  Li B(李博)
  |  收藏  |  浏览/下载:23/0  |  提交时间:2019/03/27
Process variation dependence of total ionizing dose effects in bulk nFinFETs 期刊论文  OAI收割
Microelectronics Reliability, 2018
作者:  
Zheng ZS(郑中山);  Huang YB(黄云波);  Li B(李博);  Luo JJ(罗家俊);  Han ZS(韩郑生)
  |  收藏  |  浏览/下载:26/0  |  提交时间:2019/03/28
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018
作者:  
Yang L(杨玲);  Zhang QZ(张青竹);  Huang YB(黄云波);  Zheng ZS(郑中山);  Li B(李博)
  |  收藏  |  浏览/下载:17/0  |  提交时间:2019/03/28
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510
作者:  
Yang, L (Yang, Ling)[ 1,2 ];  Zhang, QZ (Zhang, Qingzhu)[ 1,3 ];  Huang, YB (Huang, Yunbo)[ 1,2 ];  Zheng, ZS (Zheng, Zhongshan)[ 1,2 ];  Li, B (Li, Bo)[ 1,2 ]
  |  收藏  |  浏览/下载:40/0  |  提交时间:2018/09/18
Anomalous Total Dose Response and Room-Temperature Annealing Behavior in Bulk nFinFETs 会议论文  OAI收割
作者:  
Zheng ZS(郑中山);  Huang YB(黄云波);  Yang L(杨玲);  Han ZS(韩郑生);  Luo JJ(罗家俊)
  |  收藏  |  浏览/下载:17/0  |  提交时间:2018/07/20