机构

• 半导体研究所 [6]
• 广州生物医药与健康研... [2]
• 武汉植物园 [1]

采集方式

• OAI收割 [5]
• iSwitch采集 [4]

内容类型

• 期刊论文 [9]

发表日期

• 2013 [2]
• 2012 [1]
• 2008 [2]
• 2007 [4]

学科主题

• Genetics &... [2]
• 半导体材料 [2]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Vitamin C modulates TET1 function during somatic cell reprogramming 期刊论文  OAI收割 NATURE GENETICS, 2013, 卷号: 45, 期号: 12 作者:  Guo, Lin;  Pei, Duanqing;  Xu, Guo-Liang;  Pan, Guangjin;  Yao, Hongjie   |  收藏  |  浏览/下载：47/0  |  提交时间：2018/12/13 Vitamin C modulates TET1 function during somatic cell reprogramming 期刊论文  OAI收割 NATURE GENETICS, 2013, 卷号: 45, 期号: 12 Chen, Jiekai; Guo, Lin; Zhang, Lei; Wu, Haoyu; Yang, Jiaqi; Liu, He; Wang, Xiaoshan; Hu, Xiao; Gu, Tianpeng; Zhou, Zhiwei; Liu, Jing; Liu, Jiadong; Wu, Hongling; Mao, Shi-Qing; Mo, Kunlun; Li, Yingying; Lai, Keyu; Qi, Jing; Yao, Hongjie; Pan, Guangjin; Xu, Guo-Liang; Pei, Duanqing 收藏  |  浏览/下载：43/0  |  提交时间：2016/12/16 The tomato genome sequence provides insights into fleshy fruit evolution 期刊论文  OAI收割 NATURE, 2012 作者:  Tabata, Satoshi;  Sato, Shusei;  Hirakawa, Hideki;  Asamizu, Erika;  Shirasawa, Kenta   |  收藏  |  浏览/下载：169/0  |  提交时间：2017/04/13 Influence of aln buffer layer thickness on the properties of gan epilayer on si(111) by mocvd 期刊论文  iSwitch采集 Microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713 作者:  Luo, Weijun;  Wang, Xiaoliang;  Guo, Lunchun;  Mao, Hongling;  Wang, Cuimei 收藏  |  浏览/下载：33/0  |  提交时间：2019/05/12 Gan  Si(111)  Crack  Aln  Mocvd   The influence of 1 nm aln interlayer on properties of the al0.3ga0.7n/aln/gan hemt structure 期刊论文  iSwitch采集 Microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781 作者:  Guo, Lunchun;  Wang, Xiaoliang;  Wang, Cuimei;  Mao, Hongling;  Ran, Junxue 收藏  |  浏览/下载：33/0  |  提交时间：2019/05/12 Gan  Hemt  2deg  Mobility  Polarization   Algan/aln/gan/sic hemt structure with high mobility gan thin layer as channel grown by mocvd 期刊论文  iSwitch采集 Journal of crystal growth, 2007, 卷号: 298, 页码: 835-839 作者:  Wang, Xiaoliang;  Hu, Guoxin;  Ma, Zhiyong;  Ran, Junxue;  Wang, Cuimei 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 2deg  Mocvd  Algan/gan  Hemt  Power device   Mocvd-grown high-mobility al0.3ga0.7n/aln/gan hemt structure on sapphire substrate 期刊论文  iSwitch采集 Journal of crystal growth, 2007, 卷号: 298, 页码: 791-793 作者:  Wang, Xiaoliang;  Wang, Cuimei;  Hu, Guoxin;  Mao, Hongling;  Fang, Cebao 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 2deg  Electron mobility  Mocvd  Semiconducting iii-v materials  Hemt   AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839 Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/29 2DEG   MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793 Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/29 2DEG