机构

• 半导体研究所 [5]

采集方式

• OAI收割 [3]
• iSwitch采集 [2]

内容类型

• 期刊论文 [5]

发表日期

• 1998 [2]
• 1997 [3]

学科主题

• 半导体材料 [3]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Improvement of the photoluminescence from gallium nitride layers grown by mbe with an additional incident indium flux 期刊论文  iSwitch采集 Semiconductor science and technology, 1998, 卷号: 13, 期号: 12, 页码: 1469-1471 作者:  Foxon, CT;  Hooper, SE;  Cheng, TS;  Orton, JW;  Ren, GB 收藏  |  浏览/下载：36/0  |  提交时间：2019/05/12 Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux 期刊论文  OAI收割 semiconductor science and technology, 1998, 卷号: 13, 期号: 12, 页码: 1469-1471 Foxon CT; Hooper SE; Cheng TS; Orton JW; Ren GB; Ber BY; Merkulov AV; Novikov SV; Tret'yakov VV 收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  GAAS   Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy 期刊论文  OAI收割 compound semiconductors 1996, 1997, 期号: 155, 页码: 259-262 Cheng TS; Foxon CT; Ren GB; Jeffs NJ; Orton JW; Novikov SV; Xin Y; Brown PD; Humphreys CJ; Halliwell M 收藏  |  浏览/下载：25/0  |  提交时间：2010/11/17 LIGHT-EMITTING-DIODES  GALLIUM NITRIDE   MBE of GaN with DC-plasma source for nitrogen activation 期刊论文  OAI收割 compound semiconductors 1996, 1997, 期号: 155, 页码: 255-258 Novikov SV; Kipshidze GD; Lebedev VB; Sharonova LV; Shik AY; Tretyakov VV; Jmerik VN; Kuznetsov VM; Gurevich AM; Zinovev NN; Foxon CT; Cheng TS; Ren GB 收藏  |  浏览/下载：22/0  |  提交时间：2010/11/17 NITRIDES  GROWTH   Mbe of gan with dc-plasma source for nitrogen activation 期刊论文  iSwitch采集 Compound semiconductors 1996, 1997, 期号: 155, 页码: 255-258 作者:  Novikov, SV;  Kipshidze, GD;  Lebedev, VB;  Sharonova, LV;  Shik, AY 收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12