中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共7条,第1-7条 帮助

条数/页: 排序方式:
Cathodoluminescence study of gan-based film structures 期刊论文  iSwitch采集
Journal of materials science-materials in electronics, 2008, 卷号: 19, 页码: S58-s63
作者:  
Jiang, D. S.;  Jahn, U.;  Chen, J.;  Li, D. Y.;  Zhang, S. M.
收藏  |  浏览/下载:30/0  |  提交时间:2019/05/12
Al compositional inhomogeneity of algan epilayer with a high al composition grown by metal-organic chemical vapour deposition 期刊论文  iSwitch采集
Journal of physics-condensed matter, 2007, 卷号: 19, 期号: 17, 页码: 6
作者:  
Wang, X. L.;  Zhao, D. G.;  Jiang, D. S.;  Yang, H.;  Liang, J. W.
收藏  |  浏览/下载:23/0  |  提交时间:2019/05/12
The effects of lt aln buffer thickness on the optical properties of algan grown by mocvd and al composition inhomogeneity analysis 期刊论文  iSwitch采集
Journal of physics d-applied physics, 2007, 卷号: 40, 期号: 4, 页码: 1113-1117
作者:  
Wang, X. L.;  Zhao, D. G.;  Jahn, U.;  Ploog, K.;  Jiang, D. S.
收藏  |  浏览/下载:34/0  |  提交时间:2019/05/12
The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis 期刊论文  OAI收割
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 4, 页码: 1113-1117
Wang, XL (Wang, X. L.); Zhao, DG (Zhao, D. G.); Jahn, U (Jahn, U.); Ploog, K (Ploog, K.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.); Liang, JW (Liang, J. W.)
收藏  |  浏览/下载:73/0  |  提交时间:2010/03/29
Spatial distribution of deep level defects in crack-free algan grown on gan with a high-temperature aln interlayer 期刊论文  iSwitch采集
Journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: 5
作者:  
Sun, Q.;  Wang, H.;  Jiang, D. S.;  Jin, R. Q.;  Huang, Y.
收藏  |  浏览/下载:19/0  |  提交时间:2019/05/12
Measurement of threading dislocation densities in gan by wet chemical etching 期刊论文  iSwitch采集
Semiconductor science and technology, 2006, 卷号: 21, 期号: 9, 页码: 1229-1235
作者:  
Chen, J.;  Wang, J. F.;  Wang, H.;  Zhu, J. J.;  Zhang, S. M.
收藏  |  浏览/下载:19/0  |  提交时间:2019/05/12
Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文  OAI收割
journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123101
Sun, Q (Sun, Q.); Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jin, RQ (Jin, R. Q.); Huang, Y (Huang, Y.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.); Jahn, U (Jahn, U.); Ploog, KH (Ploog, K. H.)
收藏  |  浏览/下载:42/0  |  提交时间:2010/03/29