中国科学院机构知识库网格系统: 检索

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	Understanding homoepitaxial growth of horizontal kinked GaN nanowires 期刊论文 OAI收割 NANOTECHNOLOGY, 2021, 卷号: 32, 期号: 9, 页码: 95606 作者: Wu, Shaoteng; Yi, Xiaoyan; Tian, Shuang; Zhang, Shuo; Liu, Zhiqiang; Wang, Liancheng; Wang, Junxi; Li, Jinmin \| 收藏 \| 浏览/下载：16/0 \| 提交时间：2022/09/30
	Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence 期刊论文 OAI收割 Nanotechnology, 2019, 卷号: 30, 期号: 4, 页码: 045604 作者: Shaoteng Wu; Liancheng Wang; Zhiqiang Liu; Xiaoyan Yi; Yunyu Wang; Cheng Cheng; Chen Lin; Tao Feng; Shuo Zhang; Tao Li; Tongbo Wei; Jianchang Yan; Guodong Yuan; Junxi Wang; Jinmin Li \| 收藏 \| 浏览/下载：55/0 \| 提交时间：2019/11/19
	Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate 期刊论文 OAI收割 Nanoscale, 2018, 卷号: 10, 期号: 13, 页码: 5888-5896 作者: Shaoteng Wu; Liancheng Wang; Zhiqiang Liu; Xiaoyan Yi; Yang Huang; Chao Yang; Tongbo Wei; Jianchang Yan; Guodong Yuan; Junxi Wang ; Jinmin Li \| 收藏 \| 浏览/下载：40/0 \| 提交时间：2019/11/12
	Crystallographic orientation control and optical properties of GaN nanowires 期刊论文 OAI收割 RSC Advances, 2018, 卷号: 8, 期号: 4, 页码: 2181-2187 作者: Shaoteng Wu; Liancheng Wang; Xiaoyan Yi; Zhiqiang Liu; Jianchang Yan; Guodong Yuan; Tongbo Wei; Junxi Wang ; Jinmin Li \| 收藏 \| 浏览/下载：27/0 \| 提交时间：2019/11/19
	Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes 期刊论文 OAI收割 modern physics letters b, 2016, 卷号: 20, 页码: 1650221 Yang Huang; Zhiqiang Liu; Xiaoyan Yi; Yao Guo; Shaoteng Wu; Guodong Yuan; Junxi Wang; Guohong Wang; Jinmin Li 收藏 \| 浏览/下载：27/0 \| 提交时间：2017/03/16
	Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes 期刊论文 OAI收割 aip advances, 2016, 卷号: 6, 期号: 4, 页码: 045219 Yang Huang; Zhiqiang Liu; Xiaoyan Yi; Yao Guo; Shaoteng Wu; Guodong Yuan; JunXi Wang; Guohong Wang; Jinmin Li 收藏 \| 浏览/下载：30/0 \| 提交时间：2017/03/16