机构

• 半导体研究所 [7]
• 昆明动物研究所 [1]

采集方式

• OAI收割 [5]
• iSwitch采集 [3]

内容类型

• 期刊论文 [8]

发表日期

• 2019 [1]
• 2002 [2]
• 2000 [2]
• 1999 [2]
• 1993 [1]

学科主题

• 半导体材料 [2]
• 半导体物理 [2]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Molecular systematics of the Triplophysa robusta (Cobitoidea) complex: Extensive gene flow in a depauperate lineage 期刊论文  OAI收割 MOLECULAR PHYLOGENETICS AND EVOLUTION, 2019, 卷号: 132, 页码: 275-283 作者:  Feng, CG;  Zhou, WW;  Tang, YT;  Gao, Y;  Chen, JM   |  收藏  |  浏览/下载：51/0  |  提交时间：2019/09/27 Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers 期刊论文  iSwitch采集 Ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 作者:  Leung, BH;  Chan, NH;  Fong, WK;  Zhu, CF;  Ng, SW 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Deep level transient fourier spectroscopy  (dltfs)  Gallium nitride (gan)  Intermediate-temperature buffer layer (itbf)  Low-frequency noise   Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文  OAI收割 ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：141/0  |  提交时间：2010/08/12 deep level transient Fourier spectroscopy  (DLTFS)  gallium nitride (GaN)  intermediate-temperature buffer layer (ITBF)  low-frequency noise  RESONANT-TUNNELING DIODES  GENERATION-RECOMBINATION NOISE  RANDOM-TELEGRAPH NOISE  ULTRAVIOLET PHOTODETECTORS  DEVICES   Studies of high dc current induced degradation in iii-v nitride based heterojunctions 期刊论文  iSwitch采集 Ieee transactions on electron devices, 2000, 卷号: 47, 期号: 7, 页码: 1421-1425 作者:  Ho, WY;  Surya, C;  Tong, KY;  Lu, LW;  Ge, WK 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 Current stressing  Dlts  Flicker noise  Heterojunctions  Iii-v nitride   Studies of high DC current induced degradation in III-V nitride based heterojunctions 期刊论文  OAI收割 ieee transactions on electron devices, 2000, 卷号: 47, 期号: 7, 页码: 1421-1425 Ho WY; Surya C; Tong KY; Lu LW; Ge WK 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 current stressing  DLTS  flicker noise  heterojunctions  III-V nitride  LOW-FREQUENCY FLUCTUATIONS  RESONANT-TUNNELING DIODES  FLICKER NOISE  GALLIUM NITRIDE  1/F NOISE  DEVICES  TRANSISTORS  QUALITY   Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions 期刊论文  OAI收割 mrs internet journal of nitride semiconductor research, 1999, 卷号: 4, 期号: 0, 页码: art.no.g6.4 Ho WY; Fong WK; Surya C; Tong KY; Lu LW; Ge WK 收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12 FLUCTUATIONS  QUALITY  DIODES   Characterization of hot-electron effects on flicker noise in iii-v nitride based heterojunctions 期刊论文  iSwitch采集 Mrs internet journal of nitride semiconductor research, 1999, 卷号: 4, 页码: 5 作者:  Ho, WY;  Fong, WK;  Surya, C;  Tong, KY;  Lu, LW 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON 期刊论文  OAI收割 applied surface science, 1993, 卷号: 64, 期号: 3, 页码: 259-263 WONG YW; YANG XQ; CHAN PW; TONG KY 收藏  |  浏览/下载：78/0  |  提交时间：2010/11/15 REACTIVE ATMOSPHERE  BORON  IRRADIATION  SEMICONDUCTORS  JUNCTIONS