中国科学院机构知识库网格系统: 检索

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	Guidelines for the use and interpretation of assays for monitoring autophagy (3rd edition) 期刊论文 OAI收割 AUTOPHAGY, 2016, 卷号: 12, 期号: 1, 页码: 1-222 作者: Arcaro, Alexandre; Arias, Esperanza; Arimoto, Hirokazu; Ariosa, Aileen R.; Armstrong, Jane L. \| 收藏 \| 浏览/下载：375/0 \| 提交时间：2018/12/29 autolysosome autophagosome chaperone-mediated autophagy flux LC3 lysosome macroautophagy phagophore stress vacuole
	Guidelines for the use and interpretation of assays for monitoring autophagy (3rd edition) 期刊论文 OAI收割 AUTOPHAGY, 2016, 卷号: 12, 页码: 1-222 作者: Klionsky, Daniel J.; Abdelmohsen, Kotb; Abe, Akihisa; Abedin, Md Joynal; Abeliovich, Hagai \| 收藏 \| 浏览/下载：616/0 \| 提交时间：2018/05/31 Autolysosome Autolysosome Autophagosome Autophagosome Chaperone-mediated Autophagy Chaperone-mediated Autophagy Flux Flux Lc3 Lc3 Lysosome Lysosome Macroautophagy Macroautophagy Phagophore Phagophore Stress Stress Vacuole Vacuole Autolysosome Autolysosome Autophagosome Autophagosome Chaperone-mediated Autophagy Chaperone-mediated Autophagy Flux Flux Lc3 Lc3 Lysosome Lysosome Macroautophagy Macroautophagy Phagophore Phagophore Stress Stress Vacuole Vacuole Autolysosome Autophagosome Chaperone-mediated Autophagy Flux Lc3 Lysosome Macroautophagy Phagophore Stress Vacuole Autolysosome Autophagosome Chaperone-mediated Autophagy Flux Lc3 Lysosome Macroautophagy Phagophore Stress Vacuole
	III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device 专利 OAI收割专利号: US8953656, 申请日期: 2015-02-10, 公开日期: 2015-02-10 作者: \| 收藏 \| 浏览/下载：18/0 \| 提交时间：2019/12/26
	Group-III nitride semiconductor laser device 专利 OAI收割专利号: US8908732, 申请日期: 2014-12-09, 公开日期: 2014-12-09 作者: UENO, MASAKI; KATAYAMA, KOJI; IKEGAMI, TAKATOSHI; NAKAMURA, TAKAO; YANASHIMA, KATSUNORI \| 收藏 \| 浏览/下载：19/0 \| 提交时间：2019/12/26
	Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer 专利 OAI收割专利号: US8815621, 申请日期: 2014-08-26, 公开日期: 2014-08-26 作者: UENO, MASAKI; YOSHIZUMI, YUSUKE; NAKAMURA, TAKAO \| 收藏 \| 浏览/下载：15/0 \| 提交时间：2019/12/24
	Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 专利 OAI收割专利号: US8594145, 申请日期: 2013-11-26, 公开日期: 2013-11-26 作者: TAKAGI, SHIMPEI; YOSHIZUMI, YUSUKE; KATAYAMA, KOJI; UENO, MASAKI; IKEGAMI, TAKATOSHI \| 收藏 \| 浏览/下载：24/0 \| 提交时间：2020/01/13
	Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diode 专利 OAI收割专利号: US8488642, 申请日期: 2013-07-16, 公开日期: 2013-07-16 作者: YOSHIZUMI, YUSUKE; ENYA, YOHEI; UENO, MASAKI; KYONO, TAKASHI \| 收藏 \| 浏览/下载：27/0 \| 提交时间：2019/12/24
	Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device 专利 OAI收割专利号: US8477818, 申请日期: 2013-07-02, 公开日期: 2013-07-02 作者: KUMANO, TETSUYA; UENO, MASAKI; KYONO, TAKASHI; ENYA, YOHEI; YANASHIMA, KATSUNORI \| 收藏 \| 浏览/下载：19/0 \| 提交时间：2019/12/26
	Group III nitride semiconductor element and epitaxial wafer 专利 OAI收割专利号: US8391327, 申请日期: 2013-03-05, 公开日期: 2013-03-05 作者: YOSHIZUMI, YUSUKE; ENYA, YOHEI; UENO, MASAKI; NAKANISHI, FUMITAKE \| 收藏 \| 浏览/下载：16/0 \| 提交时间：2019/12/26