机构

• 半导体研究所 [4]
• 微电子研究所 [1]
• 深海科学与工程研究所 [1]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [6]

发表日期

• 2019 [1]
• 2018 [1]
• 2012 [4]

学科主题

• 半导体材料 [4]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Method to Obtain Target Speed with Underwater Acoustic Positioning System 期刊论文  OAI收割 Journal of Physics: Conference Series, 2019, 卷号: /, 期号: 1345, 页码: 3 作者:  Chengcai Lv;  Binjian Shen;  Chuan Tian;  Dazhen Xu;  Yuanjie Song   |  收藏  |  浏览/下载：5/0  |  提交时间：2024/11/15 Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2 期刊论文  OAI收割 IEEE Electron Device Letters, 2018 作者:  Yuanjie Lv;  Xingye zhou;  shibing Long;  Xubo Song;  Yuangang Wang   |  收藏  |  浏览/下载：51/0  |  提交时间：2019/04/18 Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 00218979 Luan, Chongbiao; Lin, Zhaojun; Feng, Zhihong; Meng, Lingguo; Lv, Yuanjie; Cao, Zhifang; Yu, Yingxia; Wang, Zhanguo 收藏  |  浏览/下载：16/0  |  提交时间：2013/05/07 Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 nanoscale research letters, 2012, 卷号: 7, 页码: 434 Lv YJ (Lv, Yuanjie); Lin ZJ (Lin, Zhaojun); Meng LG (Meng, Lingguo); Luan CB (Luan, Chongbiao); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Feng ZH (Feng, Zhihong); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：24/0  |  提交时间：2013/04/02 Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 11, 页码: 113501 Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Lv YJ (Lv, Yuanjie); Meng LG (Meng, Lingguo); Yu YX (Yu, Yingxia); Cao ZF (Cao, Zhifang); Chen H (Chen, Hong); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/27 Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 054513 Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Feng ZH (Feng, Zhihong); Meng LG (Meng, Lingguo); Lv YJ (Lv, Yuanjie); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：16/0  |  提交时间：2013/04/02