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• 新疆理化技术研究所 [2]
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• 中国科学院大学 [1]
• 近代物理研究所 [1]

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• 期刊论文 [17]

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浏览/检索结果: 共17条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523 作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1   |  收藏  |   Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 1, 页码: 374-381 作者:  Cai, Chang;  Liu, Tianqi;  Zhao, Peixiong;  Fan, Xue;  Huang, Hongyang   |  收藏  |   Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ]   |  收藏  |   Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer 期刊论文  iSwitch采集 Ieee transactions on nuclear science, 2016, 卷号: 63, 期号: 5, 页码: 2731-2737 作者:  Dai, Lihua;  Bi, Dawei;  Ning, Bingxu;  Hu, Zhiyuan;  Song, Lei 收藏  |   Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文  iSwitch采集 Acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: 6 作者:  Tang Hai-Ma;  Zheng Zhong-Shan;  Zhang En-Xia;  Yu Fang;  Li Ning 收藏  |   Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文  OAI收割 acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104 作者:  Yu F 收藏  |   Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer 期刊论文  OAI收割 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 卷号: 28, 期号: 1, 页码: 163-168 Wei,X; Wu,AM; Wang,X; Li,XY; Ye,F; Chen,J; Chen,M; Zhang,B; Li,CL; Zhang,M; Wang,X 收藏  |   Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer 期刊论文  OAI收割 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 卷号: 157, 期号: 1, 页码: H81-H85 Wei, X; Wu, AM; Wang, X; Li, XY; Ye, F; Chen, J; Chen, M; Zhang, B; Lin, CL; Zhang, M; Wang, X 收藏  |   Gettering layer for oxygen accumulation in the initial stage of SIMOX processing 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 卷号: 267, 期号: 8-9, 页码: 1273-1276 Ou, X; Kogler, R; Skorupa, W; Moller, W; Wang, X; Gerlach, JW 收藏  |   Oxygen gettering in Si by He ion implantation-induced cavity layer 期刊论文  OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2009, 卷号: 20, 期号: 4, 页码: 202-207 Ou, X; Zhang, B; Wu, AM; Zhang, M; Wang, X 收藏  |