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	Controlling shape anisotropy of hexagonal CdS for highly stable and efficient photocatalytic H-2 evolution and photoelectrochemical water splitting 期刊论文 OAI收割 JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2018, 卷号: 518, 页码: 140-148 作者: Yang, Yang; Ma, Yongjin; Pan, Jun; Liu, Yi; Bian, Yuan \| 收藏 \| 浏览/下载：35/0 \| 提交时间：2019/06/20 Cds-nanorod Photocatalytic H-2 Production Photoelectrochemical Solar To Hydrogen Applied Bias Photon-to-current Efficiency
	A 0.5-v novel complementary current-reused cmos lna for 2.4 ghz medical application 期刊论文 iSwitch采集 Microelectronics journal, 2016, 卷号: 55, 页码: 64-69 作者: Dai, Ruofan; Zheng, Yunlong; He, Jun; Liu, Guojun; Kong, Weiran 收藏 \| 浏览/下载：35/0 \| 提交时间：2019/05/09 Low voltage Lna Modified complementary current-reused Diode connected mosfet bias Forward body-bias Harmonic rejection
	直流法制备类富勒烯碳氢薄膜的摩擦学性能研究期刊论文 OAI收割摩擦学学报, 2015, 卷号: 35, 期号: 1, 页码: 82-89 作者: 欧玉静; 郭俊猛; 王永富; 高凯雄; 梁爱民收藏 \| 浏览/下载：39/0 \| 提交时间：2016/01/20 直流类富勒烯脉冲偏压协助低敏感性 direct current fullerene-like pulse bias-assisted low sensitivity
	Spin-dependent transport in graphene nanoribbons adsorbed with vanadium in different positions 期刊论文 OAI收割 Solid State Communications, 2013, 卷号: 155, 页码: 40-44 S. C. Zhu; K. L. Yao; G. Y. Gao; Y. Ni 收藏 \| 浏览/下载：20/0 \| 提交时间：2013/12/24 Graphene nanoribbons Bias-current Nonlinearly Tunneling magnetoresistance exchange gas
	Detection of spin bias in a four-terminal quantum-dot ring 期刊论文 OAI收割 Physics Letters A, 2011, 卷号: 375, 期号: 10, 页码: 1333-1338 W. J. Gong; H. Li; Y. Han; G. Z. Wei 收藏 \| 浏览/下载：20/0 \| 提交时间：2012/04/13 Quantum dot Spin bias Rashba interaction Charge current spintronics transport
	Total ionizing dose effects and annealing behavior for domestic VDMOS devices 期刊论文 OAI收割 Journal of Semiconductors, 2010, 卷号: 31, 期号: 4 Gao; Yu; Ren; Liu; Wang; Sun; Cui; Bo1; Xuefeng1; Diyuan1; Gang3; Yiyuan1; Jing1; Jiangwei1; 2; 2; 2; 2; 2; 2; 4; 4; 4 收藏 \| 浏览/下载：18/0 \| 提交时间：2011/08/19 Drain current - Electric breakdown - Experiments - Field effect transistors - Ionizing radiation - Irradiation - Radiation effects - Threshold voltage - Annealing behavior - Annealing time - Bias conditions - Breakdown voltage - Drain bias voltage - Electrical parameter - N-channel - On-state resistance - Preirradiation - Total dose - Total dose effect - Total ionizing dose effects - VDMOS device - VDMOS devices
	Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文 OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China 作者: Zhang J.; Li B.; Li B.; Li B.; Zhao Y. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 In recent years ZnMgO semiconductor alloys with a direct bandgap tunable between 3.37 eV and 7.8 eV become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m 5 m and 10 m respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns 170 ns and 230 ns for the devices with different finger pitches of 2 m 5 m and 10 m respectively..
	Influence of quantity and energy of the particles in gas phase on nucleation of the HFCVD of diamond films 期刊论文 OAI收割 Materials Letters, 2001, 卷号: 48, 期号: 1, 页码: 41135 G. H. Song; C. Sun; B. Wang; A. Y. Wang; R. F. Huang; L. S. Wen 收藏 \| 浏览/下载：15/0 \| 提交时间：2012/04/14 diamond film hot filament chemical vapor deposition (HFCVD) nucleation density mass current density substrate bias chemical-vapor-deposition amorphous-carbon initial growth flow rate mechanism