机构

• 上海微系统与信息技... [11]
• 新疆理化技术研究所 [2]
• 半导体研究所 [2]
• 中国科学院大学 [1]
• 近代物理研究所 [1]

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• OAI收割 [15]
• iSwitch采集 [2]

内容类型

• 期刊论文 [17]

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• 2021 [1]
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• 2010 [2]
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浏览/检索结果: 共17条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523 作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1   |  收藏  |  浏览/下载：41/0  |  提交时间：2021/12/06 Threshold voltage  TestingMOSFET circuits  Transistors  Standards  Logic gates  Fluctuations  Buried oxide (BOX)  silicon-on-insulator (SOI)  total ionizing dose (TID)   Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 1, 页码: 374-381 作者:  Cai, Chang   |  收藏  |  浏览/下载：34/0  |  提交时间：2022/01/19 D filp-flops (DFFs)  heavy ions  radiation hardening  single-event upsets (SEUs)  ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FDSOI)   Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ]   |  收藏  |  浏览/下载：118/0  |  提交时间：2019/05/14 Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)   Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer 期刊论文  iSwitch采集 Ieee transactions on nuclear science, 2016, 卷号: 63, 期号: 5, 页码: 2731-2737 作者:  Dai, Lihua;  Bi, Dawei;  Ning, Bingxu;  Hu, Zhiyuan;  Song, Lei 收藏  |  浏览/下载：63/0  |  提交时间：2019/05/09 Buried oxide  Interface trap  Silicon ion implantation  Soi nmosfets  Total dose radiation   Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文  iSwitch采集 Acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: 6 作者:  Tang Hai-Ma;  Zheng Zhong-Shan;  Zhang En-Xia;  Yu Fang;  Li Ning 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Separation by oxygen implantation  Buried oxide  Nitrogen implantation  Positive charge density   Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文  OAI收割 acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104 作者:  Yu F 收藏  |  浏览/下载：105/6  |  提交时间：2011/07/06 separation by oxygen implantation  buried oxide  nitrogen implantation  positive charge density  RADIATION HARDNESS  IMPLANTING NITROGEN  ION-IMPLANTATION  IMPROVEMENT  TECHNOLOGY  OXYGEN  LAYER   Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer 期刊论文  OAI收割 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 卷号: 28, 期号: 1, 页码: 163-168 Wei,X; Wu,AM; Wang,X; Li,XY; Ye,F; Chen,J; Chen,M; Zhang,B; Li,CL; Zhang,M; Wang,X 收藏  |  浏览/下载：15/0  |  提交时间：2012/03/24 LOW-DOSE SEPARATION  PSEUDO-MOS TRANSISTOR  BURIED OXIDE LAYERS  THERMAL-OXIDATION  WAFERS  SOI  FILM  SOICMOS   Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer 期刊论文  OAI收割 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 卷号: 157, 期号: 1, 页码: H81-H85 Wei, X; Wu, AM; Wang, X; Li, XY; Ye, F; Chen, J; Chen, M; Zhang, B; Lin, CL; Zhang, M; Wang, X 收藏  |  浏览/下载：20/0  |  提交时间：2012/03/24 LOW-DOSE SEPARATION  BURIED-OXIDE  THERMAL-OXIDATION  FILM  SOI  WAFERS   Gettering layer for oxygen accumulation in the initial stage of SIMOX processing 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 卷号: 267, 期号: 8-9, 页码: 1273-1276 Ou, X; Kogler, R; Skorupa, W; Moller, W; Wang, X; Gerlach, JW 收藏  |  浏览/下载：17/0  |  提交时间：2012/03/24 LOW-DOSE SEPARATION  ON-INSULATOR MATERIAL  BURIED OXIDE  IMPLANTED SILICON  ENERGY  REGION  WAFERS   Oxygen gettering in Si by He ion implantation-induced cavity layer 期刊论文  OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2009, 卷号: 20, 期号: 4, 页码: 202-207 Ou, X; Zhang, B; Wu, AM; Zhang, M; Wang, X 收藏  |  浏览/下载：16/0  |  提交时间：2012/03/24 BURIED OXIDE LAYERS  SILICON  DISLOCATIONS  GENERATION  VOIDS  AU